BDV92 NJSEMI | Alldatasheet

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Technical content

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDV92/94/96

DESCRIPTION

  • Collector Current -lc= -10A
  • Collector-Emitter Sustaining Voltage- : VCEo(sus) = -45V(Min)- BDV92; -60V(Min)- BDV94 -SOV(Min)- BDV96
  • Complement to Type BDV91793/95 .

APPLICATIONS

  • Designed for use in audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL VCER VCEO VEBO Ic ICM IB IE PC Tj Tstg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage BDV92 BDV94 BDV96 BDV92 BDV94 BDV96 Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Emitter Current Collector Power Dissipation @ Tc=25r Junction Temperature Storage Temperature Range VALUE -60 -80 -100 -60 -80 -100 -10 -20 -14 100 150 -65-150 UNIT V V V A A A A W r THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT °c/w IH PIN 1.BASE 2. COLLECTOR 3. EMITTER 1 2 3 TO-3PN package fM Ulj. u®+! At'E v 1 f K ' '_'•*' \\ A _. ' ^^—0 DIM A B C D E F G H J K L N q R s LI Y mm WIN 19.90 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 9.90 MAX 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5.10 3.45 2.005 6,10 10.10 M.I Semi-Coiiduetors reserves the right to change test conditions, parameter limits and package dimensions uithout notice. Information furnished liv N.I Semi-Conductors is helieml to he hoih accurate and reliable at tlie lime ol'i.;oin to press. llin\\e\\er. XI Semi-Condiiclors assumes no respoiiMhilih lor any errors or omissions discovered in ils use. XI S(.-iiii-('nn',liicloi> ciic('iiraiw> cii'-iomei's lo verily thai dalashcL-h are a nival hc|ui\\ platinj: ordci's.

Silicon NPN Power Transistor BDV92/94/96

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-1 VcE(sat)-2 VeE(sat) VBE(on) IcEO ICBO IEBO hpE-1 hpE-2 fr PARAMETER Collector-Emitter Sustaining Voltage BDV92 BDV94 BDV96 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base -Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -100mA ;IB=0 |c= -4A; IB= -0.4A IC=-10A; IB=-3.3A lc= -4A; IB= -0.4A |C=-4A;VCE=-4V VcE= VcEOmax;lB= 0 VcB=VcBOmax;lE=0 VcB=1/2VcBOmax;lE=0;Tj=150-C VEB= -7V; lc=0 lc=-4A;VCE=-4V lc=-10A;VCE=-4V lc=-0.5A;VCE=-10V MIN -60 -80 -100 TYP. MAX -1.0 -3.0 -1.6 -1.6 -0.2 -0.1 -1.0 -0.1 UNIT V V V V V mA mA mA MHz Switching times ton toff tf Turn-on Time Turn-off Time Fall Time lc= -4A; IB1= -IB2= -0.4A; Vcc= -30V 0.3 0.7 0.3 u s u s u s