BDV67D NJSEMI | Alldatasheet
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Technical content
^Eml-Conductoi iJ lodnctii, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDV67D
DESCRIPTION
- Collector Current -lc= 16A
- Collector-Emitter Saturation Voltage- : VCE(sa.)= 2.0V(Max.)@ lc= 10A
- Complement to Type BDV66D "
APPLICATIONS
- Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 160 150 0.5 200 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.625 UNIT "CM/ I 2 3 I t "— iW- PIN I.B^ 2.CC 3. a TO- f 2 A>.* 1 1 R2 J,3 LLECTOR (IITTER 3PN package tuQifr™ Hr ,, H ~ K B — • Y-*. ~*z\\M A B C D E F G H J K L N Q R S U Y :'""F • , i " '< " -^ **~R mm MIH 19.90 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 9.90 MAX 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5.10 3.45 2,005 6.10 10.10 -«- — 0 \\'l Scmi-t'(inductors reserves the right to change test conditions, parameter limits ami puckiige dimensions uithout notice. Information I'unii.shod hy NJ Semi-Condtictors is helioxed to he hoih accurate and reliahle al Ilic lime of uoiii N I Scmi-( i'mil icii n s eiiciiiiiafieN cu'-imneiA to \\cr\\\\\\l data* heels are cm rent heliire placing; onlcrs. Oiii-ilih/
Silicon NPN Darlington Power Transistor BDV67D
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VsE(on) ICEO ICBO IEBO hFE COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage ; Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS lc= 100mA ;IB=0 lc= 10A;lB=40mA lc=10A;VCE=3V VCE= /2VcEOmaxl !B= 0 VCB= VcBOmaxi |E= 0 VEB= 5V; lc= 0 lc=3A;VCE=3V lE=0;VcB=10V;ftest=1MHz MIN 150 1000 TYP. 300 MAX 2.5 UNIT V V V mA mA mA PF Switching times ton *off Turn-on Time Turn-off Time lc=10A;lBi=-lB2=40mA; Vcc= 12V 3.5 u s u s