BDV67 NJSEMI | Alldatasheet

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Technical content

iodu.cki, {J nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDV67/A/B/C

DESCRIPTION

  • Collector Current -lc= 16A
  • Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ lc= 10A
  • Complement to Type BDV66/A/B/C

APPLICATIONS

  • Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDV67 BDV67A BDV67B BDV67C BDV67 BDV67A BDV67B BDV67C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 100 120 140 100 120 0.5 175 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX Thermal Resistance, Junction to Case 0.625 UNIT r/w 2 3 I r
  • — iW- PIN 1 B^ 2. CO 3. a TO-
  • ••2 by -Uw — | — l »SE LLECTOR 1ITTER 3PN package i t -*•
  • 1- r — B — >- -*. DIM A B f D E F G H J K L N Q R S U C •*— *-s mm WIN 19.90 15.50 4,70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3,35 1,995 5.90 MAX 20.10 15.70 4.90 1.10 2.10 3.60 3,10 3.40 0,605 20.70 2.10 10.91 5.10 3.45 2.005 Y 9,90 10,1 . r '~:^_ N.I Somi-CdiRliictors reserves the right to change tost cnmlitinns. pjiruineter limits niul psickagc ilimensions without imiice. Infbiimitinn liirniMial hv N.I Sciiti-Coiuluetors is hclic\\eil to he huih ncx-iirate iiikl rolinhlo ;it (lit- lime ol'i'.dii in piv^^. I ln\\\\e\\er. N.I Seini-CdiKliielurs :issunu;s no rosponsihilil) lor nn\\s or OMUSMOMN iliscn^ereil in its use. N I Si-ini-( iMiilncidis I_-IU.'IHH;IU(.'S ar-MiiKT^ In \\i-riI'y that Jaliisheol-; are aiiK-iil heluiv plaeiiiL; ni'ilei's. Onrilih/ S

Silicon NPN Darlington Power Transistor BDV67/A/B/C

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(on) ICEO ICBO ICBO IEBO hFE COB PARAMETER Collector-Emitter Sustaining Voltage BDV67 BDV67A . BDV67B BDV67C Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDV67 BDV67A BDV67B BDV67C Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS !„— mnmA -I,-,— n lc=10A;lB=40mA lc=10A;VCE=3V VCE= VaVcEOmax! le= 0 VCB=40V;lE=0;Tj=150"C VCB=50V;lE=0;Tj=150-C V0B=60V;lE=0;Tj=150"C VCB=70V;lE=0;Tj=150-C VCB= VcBOmaxI |E= 0 VEB= 5V; lc= 0 lc=10A; VCE=3V !E=O; VcB=10V;ftest=1MHz MIN 100 120 1000 TYP. 300 MAX 2.5 UNIT V V V mA mA mA mA pF Switching times ton toff Turn-on Time Turn-off Time lc=10A;lBi=-lB2=40mA; Vcc= 12V 3.5 u s P S