BDV66

BDV66 NJSEMI | Alldatasheet

Document overview

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Technical content

me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDV66/A/B/C

DESCRIPTION

• Collector Current -lc= -16A
• Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ lc= -10A - Complement to Type BDV67/A/B/C

APPLICATIONS

• Designed for audio output stages and general ampl fier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Tc-25'C Junction Temperature Storage Temperature Range VALUE -80 -100 -120 -140 -60 -80 -100 -120 -16 -20 -0.5 175 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX Thermal Resistance, Junction to Case 0.625 UNIT "CM/ H 2 3 -iW R PIN 1. 2.C TO 3vl r — iW 1 • ^ 17 .LECTOR TTER PN package Bf ii H C
• — B — - -» DIM A B C D E F G H J K L N Q R S U C-- V '"' I mm WIN 19.90 15.50 4.70 0.90 1.90 3,40 2.90 3.20 0.595 20.50 1.90 10,89 4.90 3.35 1.995 5.90 MAX 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5.10 3.45 2.005 6.K V 9,90 10.11 ~»"° N.I Soiiii-t'tiiijuctor1 c. Infi tiiuluctors reserves the right to change tost eomlitions, piinmietcr limits ami pucknge dimensions without mnulion fiiniishcd by N.I S,-iui-Co.Hluctors is helie\\eil to he h.,ih accurate HIK! reliable ;K Hie time ofi-oin to wril> ||i;ii J;ilaslK\\ aiv cnnviil Ix-lutv plaein-; ouleix Oiirilihv S

Silicon PNP Darlington Power Transistor BDV66/A/B/C

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL Vceo(sus) VcE(sat) VeE(on) ICEO ICBO ICBO IEBO hpE COB PARAMETER Collector-Emitter Sustaining Voltage BDV66 BDV66A BDV66B BDV66C Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDV66 BDV66A BDV66B BDV66C Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS i_— inrimA -ir^— n |C=-10A; lB=-40mA lc=-10A; VCE=-3V VOE= VaVcEOma* le= 0 VCB= -40V; IE= 0;Tj= 150 XT V0B=-50V;lE=0;Tj= 150"C VcB=-60V;lE=0;Tj=150'C VCB=-70V;lE=0;Tj=150'C VCB= VcBOmax|lE= 0 VEB= -5V; lc= 0 lc=-10A;VCE=-3V !E=O; VcB=-10V;ftest=1MHz MIN -60 -80 -100 -120 1000 TYP. 300 MAX -2.5 UNIT V V V mA mA mA mA PF Switching times toff Turn-on Time Turn-off Time lc= -10A; IB1= -Is2= -40mA; VCC=12V 3.5 u s u s