BDV65 NJSEMI | Alldatasheet

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS

  • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C
  • 125 W at 25°C Case Temperature
  • 12 A Continuous Collector Current
  • Minimum hFE of 1000 at 4 V, 5 A B C SOT-9C (TO C C y~~ b C PACKAGE PVIEW) O Pin 2 is in electrical contact with the mounting base absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (Ig = 0) BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds SYMBOL VCBO VCEO VEBO Ic 'CM IB Plot Pto. Tj Tstg TL VALUE 100 120 100 120 0,5 125 3.5 -65 to +150 -65 to +1 50 260 UNIT V V V A A A W W NOTES; 1. This value applies for Ip < 0.1 ms. duty cycle < 10% 2. Derate linearly to 150"C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conducton is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter (BR)CEO breakc|oWn voltage Collector-emitter ceo cut-off current Collector cut-off CBO current Emitter cut-off EBO current Forward current FE transfer ratio Collector-emitter CE(sati saturation voltage Base-emitter 8E voltage Parallel diode VEC forward voltage TEST CONDITIONS BDV65 BDV65A lc= 30mA IB = 0 (see Note 4) BDV65B BDV65C VCB= 30V IB = 0 BDV65 VCB= 40V IB = 0 BDV65A VCB= 50V IB = 0 BDV65B VCB = 60 V IB = 0 BDV65C VCB= 60V IE = 0 BDV65 VCB= 80V IE = 0 BDV65A VCB=100V IE = 0 BDV65B VCB = 120V IE = ° BDV65C VCB= 30V IE = 0 TC = 150°C BDV65 VCE = 40V IE = 0 TC = 150°C BDV65A VCB= 50V IE = 0 ^ = 150^ BDV65B VCB= 60V IE = 0 TC = 150°C BDV65C VEB = 5V I0.0 VCE = 4V lc = 5 A (see Notes 4 and 5) IB = 20 mA lc = 5 A (see Notes 4 and 5) VCE = 4V lc = 5 A (see Notes 4 and 5) IE = 10 A |B = ° (see Notes 4 and 5) MIN 100 120 100O TYP MAX 0.4 0.4 0.4 0.4 2.5 3.5 UNIT V mA mA mA V V V NOTES: 4. These parameters must be measured 5. These parameters must be measured using pulse techniques, tj, = 300 us, duty cycle < 2%. using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER ReJC Junction to case thermal resistance ReJA Junction to free air thermal resistance MIN TYP MAX 35.7 UNIT °c/w °c/w