BDT60F NJSEMI | Alldatasheet

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Technical content

Jbe.mi-Conducto'i ^Products., (inc.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF

DESCRIPTION

  • DC Current Gain -hFE= 750(Min)@ IC=-1.5A
  • Collector-Emitter Sustaining Voltage- : VCEo(sus) = -60V(Min)- BDT60F; -SOV(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF
  • Complement to Type BDT61F/61AF/61BF/61CF

APPLICATIONS

  • Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDT60F BDT60AF BDT60BF BDT60CF BDT60F BDT60AF BDT60BF BDT60CF Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25°C Junction Temperature Storage Ttemperature Range VALUE -60 -80 -100 -120 -60 -80 -100 -120 -0.1 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX UNIT °c/w 1.BA3E 2.COLLECTOR 3. EMITTER TO-220Fa package -*R' DIM A B C D F G H J K L N Q R J U V mm WIN 16.86 9.90 4.35 0.75 3 JO 6.90 5.15 0.45 13.35 1.10 4.38 4JS 2.95 2.70 1.75 1JO MAX 17.15 10.10 4.65 0.80 3.40 7.10 5.45 0.75 13.65 1JO 5.18 5.15 3,25 2.90 2.05 1.SO Onnlih/ S

Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(on) ICBO ICEO IEBO hpE-1 hpe-2 hFE-3 VECF-! VECF-2 PARAMETER Collector-Emitter Sustaining Voltage BDT60F , BDT60AF BDT60BF BDT60CF Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain C-E Diode Forward Voltage C-E Diode Forward Voltage CONDITIONS lc= -30mA; le= 0 lc=-1.5A;la=-6mA lc=-1.5A; VCE=-3V VCB= -30V; IE= 0 VcB=1/2VcBo;lE=0;Tj=150°C VCE= 1/2VGeo; le= 0 VEB= -5V; lc= 0 lc=-0.5A;VCE=-3V lc=-1.5A;VCE=-3V lc= -4A ; VCE= -3V IF=1.5A IF=4A MIN -60 -80 -100 -120 750 TYP. 2000 250 2.1 MAX -2.5 -2.5 -0.2 -0.2 UNIT V V V mA mA mA V V Switching Times ton toff Turn-On Time Turn-Off Time 0.3 1.5 1.5 5.0 u s u s