BDT60 NJSEMI | Alldatasheet
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New Sensey Semi-Conductor Products, Ine. : a <A aS 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS TO-220 PACKAGE @ Designed for Complementary Use with (TOP VIEW) BDT61, BDT61A, BDT61B and BDT61C eT @ 50 W at 25°C Case Temperature c ——I @ 4AContinuous Collector Current ET @ Minimum hg of 750 at 1.5 V,3A Pin 2is in electrical contact with the mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) aT rmso [vane Tr] BDT6O -60 Collector-base voltage (Ie = 0) sorese Veso * v BDT60C -120 BDTEO “60 Collector-emitter voltage (Ip = 0) apreoa Vor to v BOT6OC 120 [Emiterbaseverags Sg [‘Gontnuous cotectoreurent SSC‘ YT [‘Goninuousbasecurent YY Continuous davice dissipation at (or below) 25°C case temperature (see Note 1) [Pa |. | Wi Continuous device dissipation at (or below) 25°C free alr temperature (see Note 2) [Poe | 2 | wW_| NOTES: 1. Derate linearty to 150°C case temperature at the rate of 0.4 W/'C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/"C. Quality Semi-Conductors
New Seusey Semi-Conductor Products, Ine. ' A <A” A EEN 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 eee ed electrical characteristics at 25°C case temperature (unless otherwise noted) /ARAMETER TEST CONDITIONS [mn | te | max] unr] BDTEO ~60 Collector-emitter BDT60A -80 =< Ig = Note V(BRICEO reakdown voltage | '°= “SMA a=0 (see Note 8) soTeos | -100 v BDT60C -120 Voe= G0V_ p= BDT6O “05 \\ Collector-emitter Voe= -40V Ig=0 BOT60A 05] oy ‘CEO cut-off current Voe= -50V Ip=0 BDT60B -0.5 Voe= -60V Ip=0 BDT60C 05 Vep= -60V. [e=0 BOT6O 0.2 Vep= -80V Ie=0 BDT60A 0.2 Vcp=-100V Ie=0 BDT60B 02 \\ Collector cut-off Vep=-120V Ip =0 BDT60C 02 ‘C80 current Vep= -30V Ie=0 To = 150°C BDT60 -2.0 Vep= -40V lg=0 To = 150°C BDT60A -2.0 Vep= -50V Ie=0 To = 150°C BDT60B 2.0 Vea= -60V_ [e=0 To = 150°C BDT60C 2.0 Emitter cut-off a Forward current See few en emmee et T | Collector-emitter = + Io= 1. eC Base-omitter Parallel diode le= -1.5A Ip=0 | ve fimavamoe fe 1A_wre Tf ae NOTES: 3. These parameters must be measured using pulse techniques, t, = 300 ss, duty cycle < 2%. 4, These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER [min | Typ | MAX] UNIT Faso Junction to case thermal resistance ee [Raa duno to ree airthemmalreaistanco——SSCSCSCSCSCSCSCSCSCSCSTSC*dYCC* Cf resistive-load-switching characteristics at 25°C case temperature [___PanawereR TEST CONDITIONS 7 [wn [rye | wax] unr | io= A Taey= OMA Tom =BMA_—— TT | ton Turn-off time Vee(oty = 5 V R, =209 tp=20us,des2% [| 45] | os | + Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. Quality Semi-Conductors