BDT42F NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 u s A Silicon PNP Power Transistors TELEPHONE: (973) 376-2922 (212)227-finn«; BDT42F/AF/BF/CF
DESCRIPTION
- DC Current Gain -hFE= 30(Min)@ IC=-0.3A
- Collector-Emitter Sustaining Voltage- : VCEO(sus) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF
- Complement to Type BDT41 F/AF/BF/CF
APPLICATIONS
- Designed for use in general purpose amplifer and switching
ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage BDT42F BDT42AF BDT42BF BDT42CF BDT42F BDT42AF BDT42BF BDT42CF Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation Tc-25 C Junction Temperature Storage Temperature Range VALUE -80 -100 -120 -140 -40 -60 -80 -100 -10 150 -65-150 UNIT V V V A A A W r THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX Thermal Resistance.Junction to Case 6.3 UNIT 'CM/ f ' A V " H K f ;
- «c. DIM A B C F G H J K N Q R U V 1.BASE 2. COLLECTOR 3, EMITTER TO-220Fa package mm WIN 16.85 9.90 4.35 0.75 3.20 6.90 5.15 0.45 13.35 1.10 4.98 4.85 2.95 2.70 1.75 1JO MAX 17.15 10.10 4.65 0.80 3.40 7.10 5.45 0.75 13.65 1.30 5.18 5.15 3.25 2.90 2.06 1.M »ij -*-v -»-•— D VJ N'.l Sciiii-C'niiiliictors reserve* the right Ui change test conditions, parameter limits and paekage dimensions without notiee. liirbnnation UmiNied by N.I Sfiiii-Coiuluetors is helie\\ed to he hoth accurate and reliable at (lie lime nCwm IP presv llo\\\\e\\er, M Semi-CoiKlnelors asstmies no rospoiiM'hilil\\r an> errors or omission-, ilisoucrol in its use.
Silicon PNP Power Transistors BDT42F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(OH) ICES ICEO IEBO hpE-1 hpE-2 fr PARAMETER Collector-Emitter Sustaining Voltage BDT42F BDT42AF BDT42BF BDT42CF Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT42F/AF BDT42BF/CF Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS i ^n*viA- i — n lc= -6A; |B= -0.6A lc= -6A ; VCE= -4V VCE= VCEOmax; VBE= 0 VCE= -30V; IB= 0 VCE= -60V; IB= 0 VEB= -5V; lc= 0 lc= -0.3A ; VCE= -4V lc= -3A ; VCE= -4V lc=-0.5A;VCE=-10V MIN -40 -60 -80 -100 TYP. MAX -1.5 -2.0 -0.4 -0.2 -0.5 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time 1 — RA- Ir, — Ir, — fl fiA 0.6 1.0 u s p s