BDT42 NJSEMI | Alldatasheet
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Technical content
^zmi-Conductoi ^PioJuct±, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistors BDT42/A/B/C
DESCRIPTION
- DC Current Gain -hFE = 30(Min)@ lc= -0.3A
- Collector-Emitter Sustaining Voltage- : VCEo(sus) = -40V(Min)- BDT42; -60V(Min)- BDT42A -SOV(Min)- BDT42B; -100V(Min)- BDT42C
- Complement to Type BDT41/A/B/C
APPLICATIONS
- Designed for use in general purpose amplifer and switching
ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage BDT42 BDT42A BDT42B BDT42C BDT42 BDT42A BDT42B BDT42C Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VALUE -80 -100 -120 -140 -40 -60 -80 -100 -10 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER MAX Thermal Resistance.Junction to Case 1 .92 Thermal Resistance.Junction to Ambient 70 UNIT °c/w °c/w a, ^*\\ ^ WP \\ ' PIN 1. BASE [ 2. COLLECTOR I [ { 3. EMITTER 1 2 3 TO-220C package Ha iyr A i i «-. . B • • H »*-V-H /~ rkjfi M.OOV K C ft! rc J DIM A B C D F H l K L Q R s u V i mm UIN 15.70 9.90 4.20 070 3.40 498 2.70 0.44 13.20 1.10 270 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 090 3.60 5 18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — IS 00
Silicon PNP Power Transistors BDT42/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(OR) ICES ICEO IEBO hpE-1 hFE-2 fl PARAMETER Collector-Emitter Sustaining Voltage BDT42 BDT42A BDT42B BDT42C Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT42/A BDT42B/C Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -6A; IB= -0.6A lc= -6A ; VCE= -4V VCE= VcEOmax; VBE= 0 VCE= -30V; le= 0 VCE= -60V; IB= 0 VEB= -5V; lc= 0 lc=-0.3A; VCE=-4V lc= -3A ; VCE= -4V lc=-0.5A; VCE=-10V MIN -40 -60 -80 -100 TYP. MAX -1.5 -2.0 -0.4 -0.2 -0.5 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time 0.4 0.7 u s u s