BDT41F NJSEMI | Alldatasheet
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Technical content
JbEmi-donducto'i *LPioduati, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 u s A- Silicon NPN Power Transistors TELEPHONE: (973) 376-2922 (212)227-6005 BDT41F/AF/BF/CF
DESCRIPTION
- DC Current Gain -hFE = 30(Min)@ lc= 0.3A
- Collector-Emitter Sustaining Voltage- : VCECKSUS)- 4Uv(Min)- BUI41I-; bUV(Min)- BUI 41 Ah SOV(Min)- BDT41BF; 100V(Min)- BDT41CF
- Complement to Type BDT42F/AF/BF/CF
APPLICATIONS
- Designed for use in general purpose amplifer and switching
ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VcBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage BDT41F BDT41AF BDT41BF BDT41CF BDT41 F BDT41AF BDT41BF BDT41CF Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipat
1 C ^3 ***
-65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth i-c PARAMETER MAX Thermal Resistance.Junction to Case 6.3 UNIT
- c/w f PIN 1.BASE 2. COLLECTOR 3. EMITTER 2 3 TO-220Fa package -»—B— * A \\ 1 H K " 1 <-)*. -j*rj DIM A B C U F G H J K l N Q R S i * U mm WIN 16.35 9.90 4.35 0.75 3.20 6.90 5.15 0.45 13.35 1 10 4.98 4.85 2.95 i 2.70 1 75 1.30 MAX 17.15 10.10 4.65 030 3.40 7 10 5.45 0.75 i3.es 1,30 5.18 5.15 3.25 2.90 205 1.50 *• '*~L
- +N+- N I Soiiii-t'iiiuliictors reserves the right to change test conditions, parameter limits aiul p:icki>ge dimensions uithout imiicc. Infbrination f'umislieil liy N.I Seini-Coiuluctors is helie\\ed 10 he hoih iiccuratc aiul rcliuhle ^it (lie lime oCyoiii if preis. ! Inuexer, \\ Seini-Coiklneturs nsMimes MI) respon^il'iilil\\r an\\s or oniis.sion^ iliscovoivil in ils n^e. N I Si i ni ( iMiiliieliii-- eiieiMiraiies ur.tnmeiA In \\eril> lhal J;il;bhccK ;nv viiiii-ii! hclinv plat ins: on lei's.
Silicon NPN Power Transistors BDT41F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
70=25*0 unless otherwise specified SYMBOL VcEO(SUS) VcE(Sat) VBE(OH) ICES I CEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Sustaining Voltage BDT41F BDT41AF BDT41BF BDT41CF Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT41F/AF BDT41BF/CF Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS 1 _ Qdm A- Ir,— fl lc= 6A; IB= 0.6A lc=6A;VCE=4V VCE= VcEOmax; VBE= 0 VCE= 30V; IB= 0 VCE= 60V; IB= 0 VEB= 5V; lc= 0 lc= 0.3A ; VCE= 4V lc= 3A ; VCE= 4V lc=0.5A;VCE=10V MIN 100 TYP. MAX 1.5 2.0 0.4 0.2 0.5 UNIT V V V mA mA mA MHz Switching Times ton U Turn-On Time Turn-Off Time l~— fiA' Ir,..— Ir, — n fiA 0.6 1.0 u s P S