BDT41 NJSEMI | Alldatasheet
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Technical content
tSe.mi-Condu.cto't LPtoducti, {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistors TELEPHONE: (973) 376-2922 (212)227-6005 BDT41/A/B/C
DESCRIPTION
- DC Current Gain -hFE= 30(Min)@ lc= 0.3A
- Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A SOV(Min)- BDT41B; 100V(Min)- BDT41C
- Complement to Type BDT42/42A/42B/42C
APPLICATIONS
- Designed for use in general purpose amplifer and switching
ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC TI Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDT41 BDT41A BDT41B BDT41C BDT41 BDT41A BDT41B BDT41C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25'C Junction Temperature Storage Temperature Range VALUE 100 120 140 100 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 1.92 UNIT °c/w
- c/w * ,~v - 2 , , . PIN l.BASE j ! \\. COLLECTOR \\ \\. SKITTER
123 TO-220C package
i Ha] IK'r A I
- • B »j .» !—V-*| s-F J-01} £:> moos t H ", ! T~- K » J , H w fr° G *- c \\ f DIN A B C D F G H J K L Q R S u V -*ll mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 -T500- f
- k-J R[«- N.I Sciiii-C'diidtictors reserves the right to change tost conditions, parameter limits ami package ilimen.sions \\\\ithout lt> press. I luuocr. N I Somi-CoiKliiclors assumes IID respoii'.ihilil) lor an\\s or oiuissiinii iliscovccetl in its use. \\ Sfim-l iMkliicloiv eiici'iirauex L'ii--li'iuei's to \\eril\\t Jalasheel-. aiv ciiin-nl bel'nre jilacinj; orders. Oimlih/
Silicon NPN Power Transistors BDT41/A/B/C
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(on) ICES I CEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Sustaining Voltage BDT41 BDT41A" BDT41B BDT41C Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT41/A BDT41B/C Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 30mA; le= 0 lc= 6A; IB= 0.6A lc= 6A ; VCE= 4V VCE= VcEOmaxJ VBE= 0 VCE= 30V; IB= 0 VCE= 60V; IB= 0 VEB= 5V; I0= 0 lc= 0.3A ; VCE= 4V lc=3A; VCE=4V lc=0.5A;Vce=10V MIN 100 TYP. MAX 1.5 2.0 0.4 0.2 0.5 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time i AA- i i n RA 0.6 1.0 u s p s