BDT32F NJSEMI | Alldatasheet
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Technical content
J^E.mL-(londu.ctoi ^Piotlucti, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistors TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDT32F/AF/BF/CF/DF
DESCRIPTION
- DC Current Gain -hFE = 25(Min)@ lc= -1 .OA
- Collector-Emitter Sustaining Voltage- : VCEo(sus) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF - IZUV^IVHN;- DU i o^ur
- Complement to Type BDT31 F/AF/BF/CF/DF
APPLICATIONS
- Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC M Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDT32F BDT32AF BDT32BF BDT32CF BDT32DF BDT32F BDT32AF BDT32BF BDT32CF BDT32DF Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25°C Junction Temperature Storage Ttemperature Range VALUE -80 -100 -120 -140 -160 -40 -60 -80 -100 -120 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth i-a PARAMETER MAX Thermal Resistance, Junction to Case 8.12 Thermal Resistance, Junction to Ambient 55 UNIT
- c/w 'C/W f pIN 1.BASE 2. COLLECTOR 3. EMITTER ? 3 TO-220Fa package A i H K DIM A B C D F G H J K L N R II V
- -*- S- 1 1 -•c. rf '' * '', mm WIN 16.35 9.90 4.35 0.75 3.20 6.90 5.15 0.45 13.35 1.10 4.98 4,35 2.95 2.70 1.75 1.30 MAX 17.15 10.10 4.65 0.80 3.40 7.10 5.45 0.75 13.65 1.30 5.15 5.15 3.25 2.90 2.06 1.80 irrH.
Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VaE(on) ICES ICEO IEBO hpE-i hFE-2 fi PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage BDT32F BDT32AF ~ BDT32BF BDT32CF BDT32DF BDT32F/AF/BF/CF BDT32DF Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT32F/AF BDT32BF/CF BDT32DF Emitter Cutoff Current DC Current Gain DC Current Gain BDT32F/AF/BF/CF BDT32DF Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; le= 0 lc= -3A; IB= -0.375A !c= -3A; IB= -0.75A lc=-3A;VCE=-4V VCE= VcEOmax; VBE= 0 VCE= -30V; IB= 0 VCE= -60V; IB= 0 VCE= -90V; IB= 0 VEB= -5V; lc= 0 |C=-1A;VCE=-4V lc=-0.5A;VCE=-10V MIN -40 -60 -80 -100 -120 TYP. MAX -1.2 -2.5 -1.8 -0.2 -0.1 -0.2 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time 0.3 1.0 P S n s