BDT32 NJSEMI | Alldatasheet
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Technical content
^s.mi-Conaucto'i £/ loducti, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistors BDT32/A/B/C
DESCRIPTION
- DC Current Gain -hFE= 25(Min)@ IC=-1.0A
- Collector-Emitter Sustaining Voltage- ) = -40V(Min)- BDT32; -60V(Min)- BDT32A -SOV(Min)- BDT32B; -1 OOV(Min)- BDT32C
- Complement to Type BDT31/A/B/C
APPLICATIONS
- Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage BDT32 BDT 32A BDT 32B BDT 32C BDT32 BDT 32A BDT 32B BDT 32C Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25"C Junction Temperature Storage Ttemperature Range VALUE -80 -100 -120 -140 -40 -60 -80 -100 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER MAX Thermal Resistance, Junction to Case 3.12 Thermal Resistance.Junction to Ambient 70 UNIT
- c/w
- c/w 'ill 1 2 3 PIN 1.BASE 2. COLLECTOR TO-220C package * f i i y Tp ; J T A T * -;^ =krl M.QCV * H 1 y| K f c e HP ' G *- _» DIM A B C n F n H I K L o R s u V mm WIN 15.70 9.90 4.20 070 3.40 498 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 090 3.60 5 18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 --S — jsoft Tr500 «r*-J Ounlih/ S
Silicon PNP Power Transistors BDT32/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(on) ICES ICEO IEBO hpE-1 hpE-2 fT PARAMETER Collector-Emitter Sustaining Voltage BDT32 BDT 32A . BDT 32B BDT 32C Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT32/A BDT 32B/C Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS i~— ^rimA i,-,— n lc= -3A; IB= -0.375A lc= -3A ; Vce= -4V VCE= VcEOmax; VBE= 0 VCE= -30V; IB= 0 VCE= -60V; ls= 0 VEB= -5V; lc= 0 lc=-1A; VCE=-4V |c= -3A ; VCE= -4V lc=-0.5A; VCE=-10V MIN -40 -60 -80 -100 TYP. MAX -1.2 -1.8 -0.2 -0.1 -0.2 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time I — 1 HA- i i n 1 A 0.3 1.0 u s u s