BDT31F NJSEMI | Alldatasheet
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Technical content
ucti, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistors TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDT31F/AF/BF/CF/DF
DESCRIPTION
- DC Current Gain -hFE = 25(Min)@ lc= 1 .OA
- Collector-Emitter Sustaining Voltage- : VCEo(sus) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)-BDT31DF
- Complement to Type BDT32F/AF/BF/CF/DF
APPLICATIONS
- Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25f) SYMBOL VCBO Vceo VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDT31F BDT31AF BDT31BF BDT31CF BDT31DF BDT31F BDT31AF BDT31BF BDT31CF BDT31DF Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25°C Junction Temperature Storage Ttemperature Range VALUE 100 120 140 160 100 120 150 -65-150 UNIT V V V A A A W r r THERMAL CHARACTERISTICS v», SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 8.12 UNIT °c/w
- c/w f pIN 1.BASE 2. COLLECTOR 3. EMITTER 123 TO-22QFa package fw-G—*- t i rf I t H * . , , ', - , *- *L < \\ K ^^-v ! : !. _ ^ DIM A B C D F G H J K L N Q R S u V mm WIN 16.85 9.90 4.35 0.75 X20 6.90 5.15 0.45 13.35 1.10 4.98 4.35 2.95 2.70 1.75 1.30 MAX 17.15 10.10 4.65 0.00 3.40 7.10 5.45 0.75 13.65 1JJO 5.18 5.15 3.25 2.90 2.05 150 Oiinlih/ S
Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(on) ICES ICEO IEBO hpE-1 llFE-2 ft PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage BDT31F BDT31AF ••• BDT31 BF BDT31CF BDT31 DF BDT31 F/AF/BF/CF BDT31DF Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT31 F/AF BDT31BF/CF BDT31DF Emitter Cutoff Current DC Current Gain DC Current Gain BDT31 F/AF/BF/CF BDT31 DF Current-Gain — Bandwidth Product CONDITIONS lc= 30mA; IB= 0 lc= 3A; IB= 0.375A lc= 3A; IB= 0.75A lc= 3A ; VCE= 4V VCE= VcEOmax; VBE= 0 VCE= 30V; IB= 0 VCE= 60V; IB= 0 VCE= 90V; IB= 0 VEB= 5V; lc= 0 lc=1A;VCE=4V lc= 3A ; VCE= 4V lc=0.5A;VCE=10V MIN 100 120 TYP. MAX 1.2 2.5 1.8 0.2 0.1 0.2 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time 0.3 1.0 u s y s