BDT31 NJSEMI | Alldatasheet
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Technical content
<^Etni-L.onductoi iJloduati, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistors BDT31/A/B/C
DESCRIPTION
- DC Current Gain -hFE = 25(Min)@ lc= 1 .OA
- Collector-Emitter Sustaining Voltage- : VCEOISUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A SOV(Min)- BDT31B; 100V(Min)- BDT31C
- Complement to Type BDT32/A/B/C
APPLICATIONS
- Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC TT Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDT31 BDT31A BDT31B BDT31C BDT31 BDT31A BDT 31 B BDT31C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25'C Junction Temperature Storage Ttemperature Range VALUE 100 120 140 100 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 3.12 UNIT 'C/W 'CM/ 1 1 • Li 1 2 3 1 - PIN i 1.BASE 2. COLLECTOR 3.aiHTTER TO-22DC package j A t * * B * rKEffc MLOOV t H l''\\ T Jl *H' C IT DIM A B C D F G H J K L Q R S u V x-l e - „.. mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 -^506- » [»•• j
Silicon NPN Power Transistors BDT31/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(on) ICES I CEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Sustaining Voltage BDT31 BDT31A BDT 31 B BDT31C Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT31/A BDT31 B/C Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS I-— 'inmA1 in— n lc= 3A; IB= 0.375A lc=3A;VCE=4V VCE= VcEOnax; VBE= 0 VCE= 30V; IB= 0 VCE= 60V; IB= 0 VEB= 5V; lc= 0 lc=1A;VCE=4V lc= 3A ; VCE= 4V IC=0.5A;VCE=10V MIN 100 TYP. MAX 1.2 1.8 0.2 0.1 0.2 UNIT V V V mA mA mA MHz Switching Times *on toff Turn-On Time Turn-Off Time !„— 1 HA- i i — n 1 A 0.3 1.0 n s u s