BDT30 NJSEMI | Alldatasheet
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Technical content
^E.mi-Condu.<2toi l-Ptoducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistors BDT30/A/B/C
DESCRIPTION
- DC Current Gain -hFE = 40(Min)@ lc= -0.4A
- Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)- BDT30; -60V(Min)- BDT30A -SOV(Min)- BDT30B; -100V(Min)- BDT30C
- Complement to Type BDT29/A/B/C
APPLICATIONS
- Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO Vceo VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDT30 BDT30A BDT30B BDT30C BDT30 BDT30A BDT30B BDT30C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25'C Junction Temperature Storage Ttemperature Range VALUE -80 -100 -120 -140 -40 -60 -80 -100 -0.4 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER MAX Thermal Resistance.Junction to Case 4.17 Thermal Resistance.Junction to Ambient 70 UNIT °c/w °c/w i . i 1 2 3 1 - PIN 1.BASE 2. COLLECTOR
3 EMITTER
j MQ A " ^ B „„». J-erl JOLOCV * H ' , I j K H < 3 *- C \\ PIM A B C D F G H J K L Q R S u V L mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 *500>' *|*-J
Silicon PNP Power Transistors BDT30/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(OH) ICES ICEO IEBO hpE-t hpE-2 fl PARAMETER Collector-Emitter Sustaining Voltage BDT30 BDT30A ,, BDT30B BDT30C Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT30/A BDT30B/C Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS i_— ^nmA- ir,— n IC=-1A;IB=-0.125A lc=-1A;VCE=-4V VCE= VcEOmax; VBE= 0 VCE= -30V; IB= 0 VCE= -60V; IB= 0 VEa= -5V; lc= 0 lc=-0.2A; VC£=-4V lc=-1A;VcE=-4V lc=-0.2A; VCE=-10V MIN -40 -60 -80 -100 TYP. MAX -0.7 -1.3 -0.2 -0.1 -0.2 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time l,-.— 1 nA- ir, — ir, — n 1A 0.3 1.0 u s W S