BDT30F NJSEMI | Alldatasheet
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Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistors TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDT30F/AF/BF/CF/DF
DESCRIPTION
- DC Current Gain -hFE = 40(Min)@ lc= -0.4A
- Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)-BDT30DF
- Complement to Type BDT29F/AF/BF/CF/DF
APPLICATIONS
- Designed for use in audio output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25t:) SYMBOL VCBO VCEO VEBO Ic lew IB PC X Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDT30F BDT30AF BDT30BF BDT30CF BDT30DF BDT30F BDT30AF BDT30BF BDT30CF BDT30DF Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25'C Junction Temperature Storage Ttemperature Range VALUE -80 -100 -120 -140 -160 -40 -60 -80 -100 -120 -0.4 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 9.17 UNIT "CM/ "CM/ I • 1?J X 1.BASE 2. COLLECTOR 3. EMITTER TO-220Fa package 7tr^s- »$.' . '.i i r i • A H t K -*• R- DIM A B C D F ij H J K L N Q R s u V / i - V. y' i ^* **-L H-i-V ; j * J ' mm WIN 16.85 9.90 4.35 0.7S 3.20 «.90 5.15 0.4S 1345 1.10 4.98 4.85 2.95 2.70 1.75 140 MAX 17.15 10.10 4.65 0.30 3.40 7.10 S.4S 0.75 i3.ee 140 5.18 5.15 X25 2.90 2.05 1.BD
Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
Tc=25"C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(OR) ICES ICEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Sustaining Voltage BDT30F BDT30AF BDT30BF BDT30CF BDT30DF Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT30F/AF BDT30BF/CF BDT30DF Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 IC=-1A;IB=-0.125A |C=-1A;VCE=-4V VCE= Vceomax; VBE= 0 VCE= -30V; IB= 0 VCE= -60V; IB= 0 VCE= -90V; IB= 0 VEB= -5V; lc= 0 lc= -0.2A ; VCE= -4V lc=-1A;VCE=-4V lc=-0.2A;VCE=-10V MIN -40 -60 -80 -100 -120 TYP. MAX -0.7 -1.3 -0.2 -0.1 -0.2 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time i~— 1 nA- imJ— ir%^— n 1 A 0.3 1.0 u s V S