BDT29F NJSEMI | Alldatasheet
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Technical content
^s.mi-(londiL<ito\\ One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistors TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDT29F/AF/BF/CF/DF
DESCRIPTION
- DC Current Gain -hFE= 40(Min)@ lc= 0.4A
- Collector-Emitter Sustaining Voltage- : VCEo(sus) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF SOV(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)-BDT29DF
- Complement to Type BDT30F/AF/BF/CF/DF
APPLICATIONS
- Designed for use in audio output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDT29F BDT29AF BDT29BF BDT29CF BDT29DF BDT29F BDT29AF BDT29BF BDT29CF BDT29DF Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25'C Junction Temperature Storage Ttemperature Range VALUE 100 120 140 160 100 120 0.4 150 -65-150 UNIT V V V A A A W r THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 9.17 UNIT 'C/W °c/w f • 123 1.BASE 2. COLLECTOR 3. EMITTER TO-220Fa package fpr^»" R ,V" :"" A ' H ,.:.., K + , ;. — R-
- j • . ,~r^L -^v ^;J *. ^ 0 -*C*- -*N*- DIM A B C D F G H J K L N Q R s u tf mm WIN 16.85 9.90 435 0.75 3.20 6.90 5.15 0.45 13.35 1,10 4.93 4,85 2.95 2.70 1.76 1.30 MAX 17.15 10.10 4.65 0.80 3.40 7,10 5.4S 0.75 i3.es 1.30 S.1S 5.15 3.25 2.90 2.06 1.60 Onnlih/ S
Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VsE(on) ICES ICED IEBO hpE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage BDT29F BDT29AF ••• BDT29BF BDT29CF BDT29DF Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT29F/AF BDT29BF/CF BDT29DF Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 30mA; IB= 0 IC=1A;IB=0.125A lc=1A;VCE=4V VCE= VcEOmax; VBE= 0 VCE= 30V; IB= 0 VCE= 60V; IB= 0 VCE= 90V; IB= 0 VES= 5V; lc= 0 lc= 0.2A ; VCE= 4V lc=1A;VCE=4V lc= 0.2A ; VCE= 1 0V MIN 100 120 TYP. MAX 0.7 0.2 0.1 0.2 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time 0.3 1.0 u s M S