BDT29 NJSEMI | Alldatasheet

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Technical content

JBE.mi-Conducko'i ^Ptocluati, {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistors BDT29/A/B/C

DESCRIPTION

  • DC Current Gain -hFE= 40(Min)@ lc= 0.4A
  • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min)- BDT29; 60V(Min)- BDT29A SOV(Min)- BDT29B; 100V(Min)- BDT29C
  • Complement to Type BDT30/A/B/C

APPLICATIONS

  • Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDT29 BDT29A BDT29B BDT29C BDT29 BDT29A BDT29B BDT29C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25"C Junction Temperature Storage Ttemperature Range VALUE 100 120 140 100 0.4 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 4.17 UNIT
  • c/w °c/w i , I I 1 2 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package 1-4 !J?? A " i ^ i K i—8 * He-y-gj ~Oc /-* fpB t DIM A B C D F e H J K Q R S u tf soi1- • mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 —IS 00' TT-5OO Ounlih/ S

Silicon NPN Power Transistors BDT29/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(on) ICES ICEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Sustaining Voltage BDT29 BDT29A BDT29B " BDT29C Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDT29/A BDT29B/C Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS IC=1A;IB=0.125A lc=1A; Vcs=4V VCE= VcEOmaxI VBE= 0 VCE= 30V; IB= 0 VCE= 60V; IB= 0 VEB= 5V; lc= 0 lc= 0.2A ; VCE= 4V lc=1A;VCE=4V lc=0.2A;VCE=10V WIN 100 TYP. MAX 0.7 1.3 0.2 0.1 0.2 UNIT V V V mA mA mA MHz Switching Times ton W Turn-On Time Turn-Off Time 0.3 1.0 u s u s