BDS21SMD SEME-LAB | Alldatasheet
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Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourage s customers to verify that datasheets are current before placing orders. Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8218 Issue 1 Page 1 of 2 BDS21SMD
- High DC Current Gain
- Hermetic Ceramic Surface Mount Package
- Designed For General Purpose Amplifiers and Low Speed Switching Applications
- Screening Options Available ABSOLUTE MAXIMUM RATINGS (T C = 25°C unless otherwise stated) VCBO Collector – Base Voltage -80V VCEO Collector – Emitter Voltage -80V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -5A IB Base Current -0.1A PD Total Power Dissipation at TC = 25°C 35W Derate Above 25°C 0.2W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Units Rθ JC Thermal Resistance, Junction To Case 5 °C/W ** This datasheet supersedes document 7603
Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8218 Issue 1 Page 2 of 2 ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ Max. Units VCB = -80V I E = 0 -0.2 VCB = -60V I E = 0 ICBO Collector-Cut-Off Current TC = 150°C -1.0 ICEO Collector-Cut-Off Current VCE = -40V I B = 0 -0.5 IEBO Emitter-Cut-Off Current VEB = -5V I C = 0 -2 mA IC = -0.5A V CE = -3V 1000 hFE (1) Forward-current transfer ratio IC = -3A V CE = -3V 1000 IC = -3A I B = -12mA -2 VCE(sat) (1) Collector-Emitter Saturation Voltage IC = -5A I B = -20mA -4 VBE(sat) (1) Base-Emitter Saturation Voltage IC = -5A I B = -20mA -2.8 VBE(on) (1) Base-Emitter On Voltage IC = -3A V CE = -3V -3.5 V DYNAMIC CHARACTERISTICS IC = -0.5A V CE = -4V fT Transition Frequency f = 2MHz
8 MHz
(1) Pulse Width ≤ 300us, δ ≤ 2% MECHANICAL DATA Dimensions in mm (inches) 3.60 (0.142) Max. 3.70 (0.146) 3.41 (0.134) 3.70 (0.146) 3.41 (0.134) 0.89 (0.035) min. 4.14 (0.163) 3.84 (0.151) 10.69 (0.421) 10.39 (0.409) 9.67 (0.381) 9.38 (0.369) 11.58 (0.456) 11.28 (0.444) 16.02 (0.631) 15.73 (0.619) 0.50 (0.020) 0.26 (0.010) 0.76 (0.030) min. 1 3 SMD1 (TO -276AB) Underside View Pad 1 – Base Pad 2 – Collector Pad 3 - Emitter