BDS10IG SEME-LAB | Alldatasheet
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Technical content
VCBO Collector - Base voltage (IE = 0) VCEO Collector - Emitter voltage (IB = 0) VEBO Emitter - Base voltage (IC = 0) IE , IC Emitter , Collector current IB Base current Ptot Total power dissipation at Tcase /GA3 75°C Tstg Storage Temperature Tj Junction Temperature 60V 80V 100V 60V 80V 100V 15A 90W –65 TO 200°C 200°C LAB SEME BDS10IG BDS11IG BDS12IG MECHANICAL DATA Dimensions in mm(inches) ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) Prelim. 9/98 BDS10 BDS11 BDS12 SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
FEATURES
- HERMETIC TO257 ISOLATED METAL PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS ALSO AVAILABLE IN TO220 METAL AND TO220 CERAMIC SURFACE MOUNT PACKAGES
APPLICATIONS
POWER LINEAR AND SWITCHING GENERAL PURPOSE POWER TO257 – TO257 Isolated Metal Package. Pin 1– Base Pin 2– CollectorPin 3– Emitter 123 0.89 (0.035) 1.14 (0.045) 10.41 (0.410) 10.67 (0.420) 3.56 (0.140) 3.81 (0.150) 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 0.64 (0.025) 0.89 (0.035) 3.05 (0.120) BSC 2.54 (0.100) BSC Dia. 12.07 (0.500) 19.05 (0.750) Dia. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Parameter Test Conditions Min. Typ. Max. Unit LAB SEME BDS10IG BDS11IG BDS12IG Prelim. 9/98 BDS10 VCB = 60V BDS11 VCB = 80V BDS12 VCB = 100V BDS10 VCE = 30V BDS11 VCE = 40V BDS12 VCE = 50V VEB = 5V BDS10 BDS11 IC = 100mA BDS12 IC = 5A I B = 0.5A IC = 10A I B = 2.5A IC = 10A I B = 2.5A IC = 5A V CE = 4V IC = 0.5A V CE = 4V IC = 5A V CE = 4V IC = 10A V CE = 4V IC = 0.5A V CE = 4V 500 500 500 100 2.5 1.5 40 250 15 150 /G6D A mA mA V V V V MHz ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) *Pulsed : Pulse duration = 300 /G6D s , duty cycle = 1.5% THERMAL DATA R THj-case Thermal resistance junction - case Max. 1.4 °C/W R THcase-sink Thermal resistance case - heatsink Typ. 1.0 °C/W R THj-a Thermal resistance junction - ambient Max. 80 °C/W Smooth flat surface using thermal grease. Parameter Test Conditions Max. Unit ton ts tr On Time (t d + tr) Storage Time Fall Time I C = 4A VCC = 30V IB1 = 0.4A IC = 4A VCC = 30V IB1 = –IB2 = 0.4A 0.7 1.0 0.8 /G6D s /G6D s /G6D s SWITCHING CHARACTERISTICS ICBO ICEO IEBO VCEO(sus)* VCE(sat)* VBE(sat)* VBE* hFE* fT Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Collector - Emitter sustaining voltage (IB = 0) Collector - Emitter saturation voltage Base - Emitter saturation voltage Base - Emitter voltage DC Current gain Transition frequency Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.