BDP952 SIEMENS | Alldatasheet

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Semiconductor Group 1 Nov-28-1996 BDP 952 PNP Silicon AF Power Transistor

  • For AF drivers and output stages
  • High collector current
  • High current gain
  • Low collector-emitter saturation voltage
  • Complementary type: BDP951...BDP955 (NPN) Type Marking Ordering Code Pin Configuration Package BDP 952 BDP 952 Q62702-D1340 1 = B 2 = C 3 = E 4 = C SOT-223 BDP 954 BDP 954 Q62702-D1342 1 = B 2 = C 3 = E 4 = C SOT-223 BDP 956 BDP 956 Q62702-D1344 1 = B 2 = C 3 = E 4 = C SOT-223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage BDP 952 BDP 954 BDP 956 VCEO 120 100 V Collector-base voltage BDP 952 BDP 954 BDP 956 VCBO 140 120 100 Emitter-base voltage VEBO 5 DC collector current IC 3 A Peak collector current ICM 5 Base current IB 200 mA Peak base current IBM 500 Total power dissipation, TS = 99°C Ptot W Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 42 K/W Junction - soldering point R thJS ≤ 17 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

Semiconductor Group 2 Nov-28-1996 BDP 952 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 mA, BDP 952 IC = 10 mA, IB = 0 mA, BDP 954 IC = 10 mA, IB = 0 mA, BDP 956 V(BR)CEO 120 100 V Collector-base breakdown voltage IC = 100 µA, IB = 0 , BDP 952 IC = 100 µA, IB = 0 , BDP 954 IC = 100 µA, IB = 0 , BDP 956 V(BR)CBO 140 120 100 Base-emitter breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 100 V, IE = 0 , TA = 25 °C VCB = 100 V, IE = 0 , TA = 150 °C ICBO 100 nA µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V hFE 475 Collector-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A VCEsat - - 0.8 V Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A VBEsat - - 1.5 AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz fT - 100 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 40 - pF 1) Pulse test: t < 300µs; D < 2%

Semiconductor Group 3 Nov-28-1996 BDP 952 Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 0.0 0.4 0.8 1.2 1.6 2.0 2.4 W 3.2 Ptot TS TA Permissible Pulse Load R thJS = f(tp) s tp -2 10 -1 10 0 10 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax / PtotDC = f(tp) s tp 0 10 1 10 2 10 3 10 Ptotmax/P totDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DC current gain hFE = f (IC ) VCE = 2V mA IC 1 10 2 10 3 10 - hFE -50°C 25°C 100°C

Semiconductor Group 4 Nov-28-1996 BDP 952 Collector cutoff current ICBO = f (TA) VCB = 45V 0 20 40 60 80 100 120 °C 150 TA -1 10 0 10 1 10 2 10 3 10 4 10 5 10 nA ICBO max typ Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 V CEsat 0 10 1 10 2 10 3 10 4 10 mA IC 100°C 25°C -50°C Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 V BEsat 0 10 1 10 2 10 3 10 4 10 mA IC -50°C 25°C 100°C Collector current IC = f (VBE ) VCE = 2V V BE 0 10 1 10 2 10 3 10 4 10 mA IC -50°C 25°C 100°C