BDP954E6327 INFINEON | Alldatasheet

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Technical content

BDP948_BDP950_BDP954 PNP Silicon AF Power Transistors

  • For AF driver and output stages
  • High collector current
  • High current gain
  • Low collector-emitter saturation voltage
  • Complementary types: BDP947, BDP949 BDP953 (NPN)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101 Type Marking Pin Configuration Package BDP948 BDP950 BDP954 BDP948 BDP950 BCP954 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C SOT223 SOT223 SOT223

BDP948_BDP950_BDP954 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage BDP948 BDP950 BDP954 VCEO 100 V Collector-base voltage BDP948 BDP950 BDP954 VCBO 120 Emitter-base voltage VEBO 5 Collector current IC 3 A Peak collector current, tp ≤ 10 ms ICM 5 Base current IB 200 mA Peak base current IBM 500 Total power dissipation- TS ≤ 100 °C Ptot 5 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 10 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

BDP948_BDP950_BDP954 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BDP948 IC = 10 mA, IB = 0 , BDP950 IC = 10 mA, IB = 0 , BDP954 V(BR)CEO 100 V Collector-base breakdown voltage IC = 100 µA, IE = 0 , BDP948 IC = 100 µA, IE = 0 , BDP950 IC = 100 µA, IE = 0 , BDP954 V(BR)CBO 120 Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector-base cutoff current VCB = 45 V, IE = 0 VCB = 45 V, IE = 0 , TA = 150 °C ICBO 0.1 µA Emitter-base cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 1 A, VCE = 2 V BDP948,BDP950 BDP954 IC = 1 A, VCE = 2 V hFE 475 Collector-emitter saturation voltage1) IC = 2 A, IB = 0.2 A VCEsat - - 0.5 V Base emitter saturation voltage1) IC = 2 A, IB = 0.2 A VBEsat - - 1.3 AC Characteristics Transition frequency I C = 50 mA, VCE = 10 V, f = 100 MHz fT - 100 - MHz Collector-base capacitance VCB = 10 V, f = 100 MHz Ccb - 40 - pF 1Pulse test: t < 300µs; D < 2%

BDP948_BDP950_BDP954 DC current gain hFE = ƒ(IC) VCE = 2 V 10 0 10 1 10 2 10 3 10 4 mA IC 1 10 2 10 3 10 hFE 100 °C 25 °C -50 °C Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 VCEsat 0 10 1 10 2 10 3 10 4 10 mA IC 100°C 25°C -50°C Base-emitter saturation voltage IC = (VBEsat), hFE = 10 VBEsat 0 10 1 10 2 10 3 10 4 10 mA IC -50°C 25°C 100°C Collector current IC = ƒ(VBE) VCE = 2 V VBE 0 10 1 10 2 10 3 10 4 10 mA IC -50°C 25°C 100°C

BDP948_BDP950_BDP954 Collector cutoff current ICBO = ƒ(TA) VCB = 45 V 0 20 40 60 80 100 120 °C 150 TA -1 10 0 10 1 10 2 10 3 10 4 10 5 10 nA ICB0 max typ Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 0 4 8 12 16 V 22 VCB(VEB 100 150 200 250 300 350 pF 425 CCB(CEB) CCB CEB Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 ts 0.5 1.5 2.5 3.5 4.5 W 5.5 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 RthJS D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005

BDP948_BDP950_BDP954 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

BDP948_BDP950_BDP954Package SOT223 Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 12 3 ±0.1 ±0.04 0.5 MIN. 0.28 0.1 MAX. 15˚ MAX. 6.5±0.2 A 4.6 2.30.7±0.1

0.25 M A

1.6±0.1 7±0.3 B0.25 M ±0.23.5 B 3.5 1.4 4.8 1.4 1.11.2 8 0.3 MAX. 6.8 7.55 1.75Pin 1 Manufacturer 0...10˚

BDP948_BDP950_BDP954 Edition 2009-11-16 Published by Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com >). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.