BD980

BD976 SIEMENS | Alldatasheet

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| 25C D M@ 8235605 0004429 8 MMSIEG.. PNP Silicon Darlington Transistors BD 976 } j 04429 —D- __Bo978 | SIEMENS AKTIENGESELLSCHAF “F331 BD 980 | BD 976, BD 978, and BD 980 are epitaxial PNP silicon planar darlington transistors H in plastic package similar to TO 202. These darlington transistors are designed for relay : drivers as well as for general AF applications. i BD 975, BD 977, and BD 979 are provided as complementary transistors. : i 4. Eee : : Type Ordering code gc [o]-olee BD 976 | 062702-D963 Sar Tt i i BD 978 | 062702-D965 2s As 3 3 Bp 980 | 062702-D967 aa Fhe i agen 38 i ee 13,241 7202 i r ec i 8 OE Approx. weight 16 9. Dimensionsinmm =? ! 4 I | i ‘ 4 bad Ea T i Available upon request also with bent fixing plate. . Maximum ratings (Tamb = 25°C) BD 976 | BD 978 | BD 980 : Collector-emitter voltage Veco | 45 60 80 v . Collector-base voltage -Veao | 60 80 100 v : Emitter-base voltage ~Veso 6 5 5 Vv Collector current -Ig 1 1 1 A Collector peak current lem 2 2 2 A * Base current -lg 0.1 0.1 01 A - Junction temperature Tj 160 150 150 °C Storage temperature range Tstg ~65 to +150 °c Total power dissipation (Tamb = 25°C) Prot 1.6 16 16 w (Tease = 60°C) Prot 3.6 3.6 3.6 Ww ° Thermal resistance : Junction to ambient air Ritua, | 78 | 78 | 78 | K/wW Junction to case Rinse (|. 25 25. 25 Kw to 475 1852 _ Fa13 : :

25¢ D mm@ 8235605 goo4430 4 maSTEG D w= = -45C 04430 0 an 76 33-31 BD 978 SIEMENS AKTIENGESELLSCHAF - 1-33-3 —Bp eee Static characteristics (Tamp = 25°C) 8D 976 | BD978 | BD 980 Collector cutoff current (-Vepo = Veamax) -Icso 100 100 100 nA Collector cutoff current (-Veeo = 0.5 Voemax) ~Iceo 500 500 500 nA Emitter cutoff current (-Veso = 4V) -leso 100 100 100 nA Collector-emitter breakdown voltage (—I¢ = 50 mA) —Viaryceo | >45 >60 >80 Vv Collector-base breakdown 1 voltage (~Ic = 100 pA) -Viarycao | >60 >80 >100 |v Emitter-base breakdown voltage (le = 100 wA) Verve | >5 >6 >5 v DC current gain (-Ic = 150 mA; —Vog = 10 V) hee >1000 | >1000 | >1000 | - Collector-emitter saturation voltage (-Ig = 0.5 A; ~Ig = 0.5 mA) —Veesat <13 <1.3 <13 Vv (-Ig = 1A; -Ig = 1 mA) —Veesat <18 <18 <18 Vv \\ Base-emitter saturation t voltage : (-Ig = 1A; =Ig = 1 mA) —Veesat <2.2 <2.2 $2.2 Vv Dynamic characteristics (Temp = 25°C) ‘ Transition frequency (-Ic=0.5A;-Voe=5V;f=35MHz) fr | 200 | 200 | 200 | MHz 476 1853 F-14 ‘ “2. .

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