BD956F NJSEMI | Alldatasheet
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Technical content
<LP^oductl, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD950F/952F/954F/956F
DESCRIPTION
- DC Current Gain- : hFE= 40(Min)@ lc= -500mA
- Complement to Type BD949F/951 F/953F/955F
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL VCBO VCEO VEBO Ic I CM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BD950F BD952F BD954F BD956F BD950F BD952F BD954F BD956F Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE -60 -80 -100 -120 -60 -80 -100 -120 150 -65-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX Thermal Resistance.Junction to Case 8.12 UNIT °c/w I " 1-'J 1.BASE 2, COLLECTOR 3. WITTER TO-220Fa package ^— B— -» HH-G-*. t c, A j. k K -*s- t rf / '- , i ;
- • -*-\\- *•!— -v -7~J **-D -*C». -*N»- DIM A B C D F G H J K L N Q R S u V mm MIN 16.35 9.90 4^5 0.75 3.20 6.90 S.1S 0.45 1335 1.10 4.9S 4.3S 2.95 2.70 1.75 1.50 MAX 17.15 10.10 4.65 0.30 3.40 7.10 5.4S 0.75 1366 1.30 S.18 5.15 3.25 2.90 2.05 1.50 N.I Soiiii-Coiuluctors rcsfrves the right to change tost coiulitions. piiriinietur limits ;IIK! p;ick;ige ilinicnsions \\\\ithout nniiee. Infonnution Itmii.shcil hy Nl Scini-Coiukittors is helie\\ccl ID he hoth iiceumte iiiul roliiihlc ill the lime Dl'i.'.nii u> |)I\\N^. I loucM-'r. N.I Seiiii-CoiKliietors iissiiines no rospcii'-ihilit) Ibr ;in> crrois or Diuissioiii ilisenvcral in its IIM:. N I lxiili-( 'i'ii',lin.'Ui^ ciicuiir;!'^^ Lii--liinii.ir>i to \\oril lh;il tl;il:ishccK ;nv t.-iiiK'ii! KTniv il:n.-iii oi'dji-- Ounlih/
Silicon PNP Power Transistor BD950F/952F/954F/956F
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VsE(on) ICBO ICEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Sustaining Voltage BD950F BD952F BD954F BD956F Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS i_— H nnmA • in~ ri |C=-2A;IB=-0.2A lc= -2A; VCE= -4V VCB= Vceomaxi !E= 0 VCB=1/2VcBO™ax;lE=0,T>150-C VCE= /2VcEOmax; |B= 0 VEB= -5V; lc= 0 lc= -500mA ; VCE= -4V lc= -2A ; VCE= -4V lc= -500mA ; VCE= -4V MIN -60 -80 -100 -120 TYP. MAX -1.0 -1.4 -0.05 -0.1 -0.2 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time i — \\- i _ i _ n -i A 0.3 1.5 u s n s