BD956 NJSEMI | Alldatasheet
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Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BD956
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=-120V(Min)
- DC Current Gain- : hFE= 40(Min)@ lc= -500mA
- Complement to Type BD955
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25X:) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -120 -120 150 -65-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL R(h j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 3.12 UNIT
- c/w "C/W ! : i 1 2 3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package U f- A " ~ T * « B » J-crt J0,0cv _H I -I K » 1 c T IV DIV A B C D F G H j K L Q R S u V _>'~ L f I mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 r f f NJ Soiiii-C'oiKluttors reserves the right It) change tesl eomlitions, parameter limits ami package Jimen.sions uithout nniiee. lur'oriniition t'lirnishal hy Nl Senii-Coiuluetors is helie\\al to he hinh accunife ami reliable ;il the time olwiit in pro-is. Iliiuexer. Nl Seiiii-CoiKhiLlors assumes no responsihililx Cor mis errors or omissions discovered in its use. Ounlih/ S
Silicon PNP Power Transistor BD956
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VsE(on) ICBO ICEO IEBO hpE-1 hFE-2 ft PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=-1mA; IB=0 lc=-1mA; !E=O lE=-1mA;lc=0 lo= -2A; la= -0.2A lc= -2A; VCE= -4V VCB=-120V;IE=0 VCB=-60V; lE=0,Tj=150'C VCE= -60V; IB= 0 VEB= -5V; lc= 0 lc= -500mA ; VCE= -4V lc=-2A;VCE=-4V lc= -500mA ; VCE= -4V MIN -120 -120 TYP. MAX -1.0 -1.4 -50 -1.0 -0.1 -0.2 UNIT V V V V V uA rnA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time lc=-1.0A; IB1=-IB2=-0.1A; Vcc= -20V; RL= 20 Q 0.1 0.4 u s u s