BD955 NJSEMI | Alldatasheet
Document overview
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Technical content
, O na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD955
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
- DC Current Gain- : hFE= 40(Min)@ lc= 500mA
- Complement to Type BD956
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25-C Junction Temperature Storage Temperature Range VALUE 120 120 150 -65-150 UNIT V V V A A W r THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistancejunction to Case Thermal Resistance.Junctlon to Ambient MAX 3.12 UNIT
- c/w r/w V PIN l.BASE
- I I 2, COLLECTOR , _ ) 3. EMITTER 1 2 3 TO-220C package I A T 'i - B H j-eft T H "~'\\ T H c A it'
1 Tioa-
I I DIM A B C D F G J K L Q R S U V r soi-< • I mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 r * r* " J It NJ Sciiii-C'iiinluctDrs ivsfrvos the right to change test ouulitions, parameter limits :nul packngc Jimensions uithoui notice. Inrorniiition t\\irni>lial hv NJ Scnii-Coinluctors is helic\\eil in ho hoih iiceiirstte iiikl relinhle ;it llic time oruuii lo prc^. llii\\\\e\\er, SJ Seini-CoiuluwUi^ assumes no rosponsihilil\\r ;ni> errors or OIIIISMOM". iliseovcreol in its n>e. N I S> ini-( nir.|in.-|iiis cin'i'iiiiim's cil-'liiiiH'i'x In NiTJIy lh:il J;ila'heels ;iiv elIIK-III K'l'niv Licini: oi'ilci'v
Silicon NPN Power Transistor BD953
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(on) IOBO ICEO IEBO hpE-1 hFE-2 fl PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 1mA; !B=O
- • lc=1mA; IE=0 !E=1mA; lc=0 lc= 2A; IB= 0.2A lc= 2A; VGE= 4V VCB=120V;IE=0 VCB=60V;lE=0,Tj=150=C VCE= 60V; IB= 0 VEB= 5V; lc= 0 lc= 500mA ;VCE= 4V lc=2A;VCE=4V lc= 500mA; VCE= 4V MIN 120 120 TYP. MAX 1.0 1.4 1.0 0.1 0.2 UNIT V V V V V uA mA mA mA MHz Switching Times toff Turn-On Time Turn-Off Time IC=1.0A;IB1=-IB2=0.1A; VGC= 20V; RL= 20 n 0.3 1.5 P S V- S