BD954 NJSEMI | Alldatasheet
Document overview
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Technical content
^£mi-C,onductoT LPioduati, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD954
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=-100V(Min)
- DC Current Gain- : hFE= 40(Min)@ lc= -500mA
- Complement to Type BD953
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25^) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Tc=25"C Junction Temperature Storage Temperature Range VALUE -100 -100 150 -65-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 3.12 UNIT °c/w 'CM/ ! 1 ' ! 2 3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package y j A « B - ri-efi W.W- . J H -r - K f 11 ~H ' c f)* fh DIM A B C D F G H J K L R S U V L D c I mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 t fSOfr f f IV, N.I Semi-OtiKlnetors reserves the right to change test eoiulitions, parameter limits junl pnckiigc dimensions without noiiee. Inrbrmiitimi l\\inti>hal liy N.I Semi-Coiuluetors is helic\\eil to he hoih neeunite iiiul reliuhle nl (lit- lime .il'eiiin in pivs>:. llo\\\\e\\er, N.I Seiiii-Cdiuluclors nssumes no rospoiiMhilih lor iin\\s or OMHSMIHI-, iliscosered in its u-.e.
Silicon PNP Power Transistor BD954
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(OII) ICBO ICEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=-1mA; IB= 0 lc=-1mA;lE=0 lE=-1mA; lc=0 |c= -2A; IB= -0.2A lc= -2A; VCE= -4V VCB=-100V; IE=0 VGB=-50V; lE=0,Tj=150°C VCE= -50V; IB= 0 VEB= -5V; lc= 0 lc= -500mA ; VCE= -4V lc=-2A;VCE=-4V lc= -500mA ; VCE= -4V MIN -100 -100 TYP. MAX -1.0 -1.4 -50 -1.0 -0.1 -0.2 UNIT V V V V V uA mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time lc=-1.0A;lBi=-lB2=-0.1A; Vcc= -20V; RL= 20 Q 0.1 0.4 u s u s