BD953F NJSEMI | Alldatasheet
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Technical content
J^E.ml-Conducko'i ^-Product*, flna.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD949F/951F/953F/955F
DESCRIPTION
- DC Current Gain- : hFE= 40(Min)@ lc= 500mA
- Complement to Type BD950F/952F/954F/956F
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER BD949F BD951F BD953F BD955F BD949F BD951F BD953F BD955F Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Tc-25'C Junction Temperature Storage Temperature Range VALUE 100 120 100 120 150 -65-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX Thermal Resistance.Junction to Case 8.12 UNIT "CM/ ¥ ™K 123 1.BASE 2. COLLECTOR 3- EMITTER TO-220F9 package -. — B — - A i. i "" " H K V HIM A B C D G H J K L N Q R U V mm MIN 16.85 9.90 4.35 0.75 3.20 6.90 5.15 0.45 13.35 1.10 4.9S 4.35 2.95 2.70 1.75 1.30 MAX 17.15 10.10 4.65 0.80 3.40 7.10 5.45 0.75 13,65 140 5.18 5.15 3.25 2.90 2.06 1.50 ff M.I Soitii-C'oiKluctors reserves the right lo change tost conditions, parameter limits nikl piiekiigc dimensions without nuiiee. Infoniiiition ruriiisheJ hy N.I St-nii-Coiuluctors is helie\\ctl to he both iiceunite iiinl reliahk- :i! the link- nrwiin [c pivs-; lluuexer. \\,l Seini-Coikluetors assiinios no responsihilil) lor an\\s or omission*, discovered in its use.
Silicon NPN Power Transistor BD949F/951F/953F/955F
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(on) ICBO ICEO IEBO hpE-1 hpE-2 fr PARAMETER Collector-Emitter Sustaining Voltage BD949F BD951F BD953F BD955F Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 2A; IB= 0.2A lc= 2A; VCE= 4V VCB= VcBOmaxi !E= 0 VCB=1/2VcBOnla,;lE=0,Tj=150-C VCE= /2VcEOmaxl le= 0 VEB= 5V; lc= 0 lc= 500mA ; Vce= 4V lc= 2A ; VCE= 4V lc= 500mA ; VCE= 4V MIN 100 120 TYP. MAX 1.0 1.4 0.05 0.1 0.2 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time 0.3 1.5 u s M S