BD953 NJSEMI | Alldatasheet
Document overview
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Technical content
<^£mi-t.onductoT iPiodtosti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD953
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=100V(Min)
- DC Current Gain- : hFE= 40(Min)@ lc= 500mA
- Complement to Type BD954
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25t:) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 100 100 150 -65-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 3.12 UNIT 'C/W
- CM/ , ,-s, , 2 ^LV 3 V V : PIN 1.6ASE 1 i j 2. COLLECTOR I _ | S.BdITTER 1 2 3 TO-220C package ; y i A - B — j r»-V »| X" ^crl M.QOV K t c i IT. fir" oh- DIN A B C D F G H J K L Q R S U V mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 r 1506
- •h j N.I Semi-Condnctors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout in n ice. Information furnished by Nl Scmi-Conductors is helie\\cd lo he hold accurate and reliahle nl the time ot'uoin lo press. I lm\\c\\cr. \\.l Senii-Coiulnclors assumes no responsibility lor an> errors or omissions discovered in its use. N I Si-mi -('iMidnclois ciicniira'ies customers lo \\erily thai datasheet•< are cniM-iil helinv placinu orders
Silicon NPN Power Transistor BD953
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VsE(on) ICBO ICEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 1mA; !B= 0 lc=1mA; IE=0 lE=1mA;lc=0 lc= 2A; IB= 0.2A lc= 2A; VCE= 4V VCB=100V;IE=0 VCB=50V;lE=0,Tj=150-C VCE= 50V; IB= 0 VEB= 5V; lc= 0 lc= 500mA ;VCE= 4V lc= 2A ; VCE= 4V lc= 500mA ; Vcs= 4V MIN 100 100 TYP. MAX 1.0 1.4 1.0 0.1 0.2 UNIT V V V V V uA mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time lc=1.0A;lBi=-lB2=0.1A; Vcc= 20V; RL= 20 Q 0.3 1.5 u s u s