BD952

BD952 NJSEMI | Alldatasheet

Document overview

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Technical content

<z~)£mi-C.onauetoT -rioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD952

DESCRIPTION

• Collector-Emitter Breakdown Voltage- : V(BR)CEo= -SOV(Min)
• DC Current Gain- : hFE= 40(Min)@ lc= -500mA
• Complement to Type BD951

APPLICATIONS

• Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25t:) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -80 -80 150 -65-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.12 UNIT 'C/W 'CM/ ,,-»,. 2 l^^^l 1 — L V PIN 1.BASE i j 2. COLLECTOR | 3. EMITTER i 2 3 TO-220C package ui| A " I- -i- * B H -•-V--H x- :N£rt MLOCV
• A13 K T i) c or haaD 3 *- DIM A B C D F G H J K L Q R s U V f so*- • mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6,45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — iSOfr-
• [•-j ^ ^- N.I Soiiii-C'iiiuliictors reserves the right lo change test cnnilitions. parameter limits ami package Jiniensions without notice. Information tiirnislieil l>y N.I Seini-Comluctors is hclic\\cd to he hoth accurate anil reliahle iit the time iit'i.'.»iiiH Ic press. I It n\\. N.I Sen li-Coiuluc tors assumes no rosponsihililv I or an) errors or omissions iliseoverei! in its use. \\ Si-mi •( 'ninliiclois enctiiira^C'- tii-.lnmei^ lo voril'v thai vlala'-lieel> are ciiiiviil he In re plaeini; orders.

Silicon PNP Power Transistor BD952

ELECTRICAL CHARACTERISTICS

Tc-25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VeE(on) ICBO ICEO IEBO hpE-1 hpE-2 fl PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=-1mA; IB=0 lc=-1mA;lE=0 lE=-1mA;lc=0 lc= -2A; IB= -0.2A lc= -2A; VCE= -4V VCB= -80V; IE= 0 VCB=-40V;lE=0,Tj=150'C VOE= -40V; IB= 0 VEB= -5V; lc= 0 lc= -500mA ; VCE= -4V lc=-2A;VCE=-4V lc= -500mA ; VCE= -4V MIN -80 -80 TYP. MAX -1.0 -1.4 -50 -1.0 -0.1 -0.2 UNIT V V V V V uA mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time IC=-1.0A;IB1=-IB2=-0.1A; Vcc= -20V; RL= 20 Q 0.1 0.4 u s u s