BD951 NJSEMI | Alldatasheet
Document overview
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Technical content
Jbs.ml-Condu.ctoi ^Product*., 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227*6005 FAX: (973) 376-8960 BD951
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)
- DC Current Gain- : hFE= 40(Min)@ lc= 500mA
- Complement to Type BD952
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 150 -65-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 3.12 UNIT "CM/ 'C/W j***. 2 ; ' PIN 1. BASE I I 2. COLLECTOR ', |_ 3.BVIITTER 1 2 3 TO-220C package U L : t * A f * - B -j J\\l/ t MlOOV f H ' , 1 j K t 11 H c c I r 1 00" l*» I I DIM A B C D F G H J K L R S U V c mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 r N.I Sciiii-C'niKluctors reserves the right to change tost comlitions. panuiictcr limits anil package dimensions uithout Miiiice. Inrbnnation ttimishal hy N.I Scini-CtiiuUictors is helio\\al to he hoih accurate ami reliable at the time <>f yum;. \\ Srmi -t 1'iHltn.ltns eiiciiiiiaui."' cir-lonK'iA In \\oril> that Jala'-liec-l-; aiv einivn! bcl'mv placini; orders. Onnlih/ S
Silicon NPN Power Transistor BD951
ELECTRICAL CHARACTERISTICS
Tc=25"C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(on) ICBO ICEO IEBO hpE-1 hFE-2 fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 1mA; IB=0 lc= 1mA; IE=0 lE=1mA; lc=0 lc= 2A; IB= 0.2A lc= 2A; VOE= 4V VCB= 80V; IE= 0 VCB=40V;lE=0,Tj=150°C VGE= 40V; IB= 0 VEB= 5V; lc= 0 lc= 500mA ;VCE= 4V lc=2A;VCE=4V lc= 500mA ;VCE= 4V MIN TYP. MAX 1.0 1.4 1.0 0.1 0.2 UNIT V V V V V UA mA mA mA MHz Switching Times toff Turn-On Time Turn-Off Time lc= 1.0A; IB1=-IB2=0.1A; VCC=20V; RL=20Q 0.3 1.5 n s u s