BD950 NJSEMI | Alldatasheet
Document overview
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Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD950
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -60V(Min)
- DC Current Gain- : hFE= 40(Min)@ lc= -500mA
- Complement to Type BD949
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25-Q SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -60 -60 150 -65-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance.Junction to Ambient MAX 3.12 UNIT 'C/W
- c/w 1 '[ 1 2 2 PIN 1. BASE 2. COLLECTOR 3. EMITTER TO-220C package U i * T A J-iC'f L 3"~Vlx b MLOOV * H , K T U -H< c f. , ^_ - — DIM A B C D F G H J K L R S V X-F * — • mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — jSOO N.I Semi-Cuiiiliictors reserves the right to change tcsl comlitiims. parameter limits ami package Jimonsions \\vithout iiuikv. liironnation t'unii.shcd hy N.I Seini-Conductors is helic\\v;il to hu hnih accurato and rcliahlc at (lie lime o| i.ioii li'pivs>;. llouexer, N.I Seini-CoiuliiLlors assumos no rospon^iliilil> lor aii> CIIXM'S or oinission^ ilisL'ovorcil in its ur-e. N I Si-ini-( 'I'lulucliii-. ciiciniriiucs cir-liiniLTs In writs ihai Jataslk-cl-. aiv cniu-nl hvliuv placing oi'ilers.
Silicon PNP Power Transistor BD950
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(on) ICBO ICEO IEBO hpE-1 hpE-2 fl PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=-1mA; \\B~ 0 lc=-1mA; IE=0 lE=-1mA; lc=0 lc= -2A; IB= -0.2A lc= -2A; VCE= -4V VCB= -60V; IE= 0 VCB=-30V;lE=0,Tj=150t VCE= -30V; IB= 0 VEB= -5V; lc= 0 lc= -500mA ; VCE= -4V |c=-2A;VCe=-4V lc= -500mA ; VCE= -4V MIN -60 -60 TYP. MAX -1.0 -1.4 -50 -1.0 -0.1 -0.2 UNIT V V V V V uA mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time lc=-1.0A;lBi=-lB2=-0.1A; VOC= -20V; RL= 20 Q 0.1 0.4 u s M S