BD944 NJSEMI | Alldatasheet
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Technical content
J^s.mi-Condu.cto'i ^Products., (Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD944/946/948
DESCRIPTION
- DC Current Gain- : hFE= 85(Min)@ lc= -500mA
- Complement to Type BD943/945/947
APPLICATIONS
- Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25t:) SYMBOL VOBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BD944 BD946 BD948 BD944 BD946 BD948 Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Tc=25°C Junction Temperature Storage Temperature Range VALUE -22 -32 -45 -22 -32 -45 150 -65-150 UNIT V V V A A A W gc THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 3.12 UNIT "CM/ 'C/W 1 ; 1 2 2> Iff Kta PIN 1 BASE 2. COLLECTOR 3.EMinER TO-220C package * * Q 1 A J t » B • •- J/7fl 3\\lx t MLOOS * H _ J -v K f 1 C li'r G [-- -— - DIK A B C D F G H J K L Q R S u V X"~' L D r SO*'. . mm
1 WIN
15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 f i
- .[•• j ( •*-•- N.I Soini-C'iiiiiluctors reserve* the right to change test conditions, parameter limits and package dimensions uiihout notice. Information furnished hy Nl Seini-t'onductors is hclicxcd to he both accurate and reliable ;ii llio Mine of L'.oii Ic |)I\\'-.N I lin\\e\\er. Nl Seini-('(inductors assumes no responM'hilih lor MIIN errors or omissions discovered in its use. N I Semi •( I'M'.liK'UiiN cneiMiiaw- ai'-lmiK-i \\n \\eril\\t data--heel •> aiv em ''(.-nl be lure plaeiiii: orders.
Silicon PNP Power Transistor BD944/946/948
ELECTRICAL CHARACTERISTICS
Tc=25"C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(on) ICBO ICEO IEBO hpE-1 hFE-2 hFE-3 hFE-4 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage BD944 BD946 BD948 BD944/946 BD948 BD944/946 BD948 Collector Cutoff Current Collector Cutoff Current BD944 BD946 BD948 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain BD944/946 BD948 DC Current Gain-Only For BD948 Current-Gain — Bandwidth Product CONDITIONS 'lc= -100mA; IB= 0 lc= -2A; IB= -0.2A lc= -3A; IB= -0.3A lc= -2A; VCE= -1V lc=-3A;VCE=-1V VCB= VcBOmax; |E= 0 VCB=VcBOm,K;lE=0,Tj=150<C V0E=-15V;IB=0 VCE= -20V; IB= 0 VCE= -25V; IB= 0 VEB= -5V; lc= 0 |c=-10mA;VOE=-5V lc= -500mA; Vce=-1V lc=-3A;VCE=-1V lc= -250mA ;VCE= -1V MIN -22 -32 -45 TYP. MAX -0.5 -0.7 -1.1 -1.3 -0.05 -0.1 -0.2 475 UNIT V V V mA mA mA MHz