BD934 NJSEMI | Alldatasheet

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Technical content

J^zmL-donduetoi Lpioducti, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD934/936/938/940/942

DESCRIPTION

  • DC Current Gain- : hFE= 40(Min)@ lc= -150mA
  • Complement to Type BD933/935/937/939/941

APPLICATIONS

  • Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IOM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BD934 BD936 BD938 BD940 BD942 BD934 BD936 BD938 BD940 BD942 Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -45 -60 -100 -120 -140 -45 -60 -80 -100 -120 -0.5 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rlh j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 4.17 UNIT 'CM/
  • c/w ' 1 * PIN 1.BASE j : j 2. COLLECTOR ' _ 3. EMITTER 1 2 3 TO-220C package *JQ| A » L -« B H "•-V-H x" T-CXt MLOCV 4 _HJ'4 K ~H ' c 1 i fr ii3o-D 1 0 I , | DIM A B C D F G K J K L Q R S u V -». mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.4$ 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 t RK Onnlih/ S

Silicon PNP Power Transistor BD934/936/938/940/942

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified SYMBOL VoEO(SUS) VcE(sat) VeE(on) ICBO ICEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Sustaining Voltage BD934 BD936 BD938 BD940 BD942 Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -100mA; IB= 0 IC=-1A;IB=-0.1A lc=-1A;VCE=-2V VCB- VcBOmax; |E= 0 VCB= Vcecwax; !E= 0,Tj=150°C VCE= VcEOtnax; ls= 0 VEB= -5V; lc= 0 lc= -1 50mA ; VCE= -2V lc=-1A;VGE=-2V lc= -250mA ; VCE= -10V MIN -45 -60 -80 -100 -120 TYP. MAX -0.6 -1.3 -0.05 -0.1 -0.2 250 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time 0.2 0.7 0.6 2.4 n s y s