BD933F NJSEMI | Alldatasheet

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Technical content

^smi-J-onductoi *-Pioductit One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BD933F/935F/937F/939F/941F

DESCRIPTION

  • DC Current Gain- : hFE= 40(Min)@ lc= 150mA
  • Complement to Type BD934F/936F/938F/940F/942F

APPLICATIONS

  • Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BD933F BD935F BD937F BD939F BD941F BD933F BD935F BD937F BD939F BD941F Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipatio *& 1 C ^v ^ n Junction Temperature Storage Temperature Range VALUE 100 120 140 100 120 0.5 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth J-a PARAMETER MAX Thermal Resistance, Junction to Case 4.17 Thermal Resistance, Junction to Ambient 55 UNIT 'C/W
  • c/w 1.BASE 2. COLLECTOR 3. EMITTER TO-220Fa package t $ r°^ : i I i H DIM A b C n ... <-> F G H J K L N Q R S u V mm MIN 16.85 9.90 4.35 075 3.20 6,90 5.15 0.45 13.35 1.10 4.93 4.85 2.95 2.70 1.75 1.30 MAX 17.15 10.10 ^4.65 080 3.40 7.10 5.45 0.75 13.65 1.30 5,18 5,15 3.25 2.90 2.05 1.50 r Oiinlih/ S

Silicon NPN Power Transistor BD933F/935F/937F/939F/941F

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(on) ICBO ICEO IEBO hpE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage BD933F BD935F BD937F BD939F BD941F Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 100mA; IB= 0 lc= 1A; IB= 0.1 A lc= 1A; VCE= 2V VCB= VcBOmaxi IE- 0 VcB=VCBOnlax;lE=0,Tj=150-C VCE= VcEOmaxi IB- 0 VEB= 5V; lc= 0 lc= 150mA; VCE= 2V lc= 1A;VCE=2V lc= 250mA ; VCE= 1 0V MIN 100 120 TYP. MAX 0.6 1.3 0.1 3.0 0.5 1.0 250 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time 0.4 1.5 1.0 3.0 u s u s