BD934F NJSEMI | Alldatasheet
Document overview
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Technical content
zii£.u J io ducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD934F/936F/938F/940F/942F
DESCRIPTION
- DC Current Gain- : hFE=40(Min)@lc= -150mA
- Complement to Type BD933F/935F/937F/939F/941F
APPLICATIONS
- Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25"C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BD934F BD936F BD938F BD940F BD942F BD934F BD936F BD938F BD940F BD942F Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -45 -60 -100 -120 -140 -45 -60 -80 -100 -120 -0.5 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER MAX Thermal Resistance.Junction to Case 4.17 Thermal Resistance.Junction to Ambient 55 UNIT 'CM/
- c/w f pIN 1.BASE 2. COLLECTOR 3. EMITTER ? 3 TO-220Fa package
- *— - »* ; A v t 3— » DIM A B C D F Q H J K L N Q R v V rF ! ' / . , 1 _^*'--J mm MIN MAX 1«^S 17.15 9.90 10.10 4.35 4.65 075 080 3.20 3.40 6.90 7.10 S.15 5.45 0.45 0.75 13.35 13.65 1.10 1.30 4.98 5.18 4.35 5.15 2.9S 3.25 2.70 2.90 1.75 2.05 1JO 1.SO :«,D Ounlih/ S
Silicon PNP Power Transistor BD934F/936F/938F/940F/942F
ELECTRICAL CHARACTERISTICS
TC=25*C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(on) ICBO ICEO IEBO hpE-1 h|=E-2 fl PARAMETER Collector-Emitter Sustaining Voltage BD934F BD936F BD938F BD940F BD942F Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 100mA; IB=0 IC=-1A;IB=-0.1A |C=-1A;VCE=-2V VCB~ VcBOmax; !E= 0 VCB= VCBC™*; lE=0,Tj-150r VCE= VcEOmaxI |B= 0 VEB= -5V; lc= 0 lc=-150mA;VCE=-2V lc=-1A; VCE=-2V lc= -250mA ;VCE= -10V MIN 100 120 TYP. MAX -0.6 -1.3 -0.1 -3.0 -0.5 -1.0 250 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time i~ 1 HA- u.,— i~~ n 1 A 0.2 0.7 0.6 2.4 u s u s