BD933 NJSEMI | Alldatasheet
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Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BD933/935/937/939/941 iv,
DESCRIPTION
- DC Current Gain- : hFE= 40(Min)@ lc= 150mA
- Complement to Type BD934/936/938/940/942
APPLICATIONS
- Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25"C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BD933 BD935 BD937 BD939 BD941 BD933 BD935 BD937 BD939 BD941 Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 100 120 140 100 120 0.5 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 4.17 UNIT r/w
- c/w w 1 j. I 1 2 3 1 - PIN 1.BASE 2. COLLECTOR 3- EMITTER TO-220C package j tlf' A" " -i B —
- *• V -H ^ert _. 11 fl^l T Jv v V c DIM A B C D F G H J K L Q ft S u V § i mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.1? 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 —1500 Oiinlih/ S
Silicon NPN Power Transistor BD933/935/937/939/941
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(on) ICBO ICEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Sustaining Voltage BD933 BD935 BD937 BD939 BD941 Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 100mA; IB= 0 lc= 1A; IB= 0.1A lc=1A;VCE=2V VCB= VcBOmax; |E= 0 VcB=VCBOmax; IE= 0,Tj=1 50'C VCE= VcEOmaxI IB" 0 VEB= 5V; lc= 0 lc= 150mA; VCE= 2V lc=1A;VCE=2V lc= 250mA ; VCE= 10V MIN 100 120 TYP. MAX 0.6 1.3 0.05 0.1 0.2 250 UNIT V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time I — 1 HA- I — I — n 1 A 0.4 1.5 1.0 3.0 u s u s