BD912 NJSEMI | Alldatasheet

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Technical content

^Emi-Conducko'i iPioducki, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD912

DESCRIPTION

  • DC Current Gain - ; hFE = 40@ IC= -0.5A
  • Collector-Emitter Sustaining Voltage- : VCEo(sus)=-100V(Min)
  • Complement to Type BD911

APPLICATIONS

  • Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -100 -100 -15 -20 150 -65-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case UNIT V V V A A A W MAX 1.38 UNIT "CM/ - j w^^mm \\S ^^^H 1 — L 1 PIN 1.BASE i | i 2. COLLECTOR ' [ | 3.a/iiTTER 1 2 3 TO-220C package , *• *JoJ A ! * - B H *.V-H x--i ^ert V K f H c i r I II G [»- niiv A B C D F G H J K L Q R S U V c mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — 1506- *r* NJ SiMiii-l'oiKluelors reserves the right to change test conditions, parameter limits and package dimensions uithout nuiicc. Information furnished hy NJ Sciiii-C'onductors is helie\\ed to he hoth accurate and reliable ;i( the lime ol'i.'.oin to pix^s. I lm\\c\\er, \\ Seiiii-Coiidiiclors assumes no respoiiMhilit) lor an> errors or omissions discovered in its use. N I Vini-( i Midi iciois encuurajics ui'-lnmcrs to veril'v that datasheets are einn.-n! K-l'ure placini; orders.

Silicon PNP Power Transistor BD912

ELECTRICAL CHARACTERISTICS

70=25*0 unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-1 VcE(sat)-2 VeE(sat) VBE(on) ICBO IcEO IEBO hpE-1 hpE-2 hpE-3 fl PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage '• Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS lc= -50mA ;IB= 0 lc= -5A; IB= -0.5A lc=-10A;lB=-2.5A IC=-10A;IB=-2.5A lc= -5A ; VCE= -4V VcB=-100V;le=0 VCE= -50V; I B= 0 VEB= -5V; lc= 0 lc= -0.5A ; VCE= -4V lc= -5A ; VCE= -4V lc=-10A;VCE=-4V lc= -0.5A; VCE= -4V; ftest= 1.0MHz MIN -100 3.0 MAX -1.0 -3.0 -2.5 -1.5 -0.5 -1.0 -1.0 250 150 UNIT V V V V V mA mA mA MHz