BD910 NJSEMI | Alldatasheet
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Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD910
DESCRIPTION
- DC Current Gain - : hFE = 4u@lc=-0.5A
- Collector-Emitter Sustaining Voltage-. : VCEO(sus)= -SOV(Min)
- Complement to Type BD909
APPLICATIONS
- Designed for use in general purpose power amplifier switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -80 -80 -15 -20 150 -65-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case and UNIT V V V A A A W r MAX 1.38 UNIT
- c/w
- Pi 3 ' i \\N 1.BASE | ; 2. COLLECTOR , ] 3. EMITTER
- ] 2 3 TO-220C package MQ J A 1 »
- » B H -. v H ,-- ^&i MLWS . H-4 { K ~H c C r I I DIM A B C D F G H J K L Q R S U V f soi1' mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — 1500-
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- [*- J IV, N.I Scmi-CoiKliiLtors reserves the right to chiiiige test conditions, pjiramotcr limits and packujw dimensions \\vithout in press. llin\\e\\er, M Semi-CinKliiekirs assuinos no respon-.ibilil\\r ans cimrs or omis>ions discovered in ils n-.e. N I Si-nn-l iMidtictiic- eneniira^^ i.n-.toiiiers In \\eril\\l J;il;blieel-, are oint'iil bel'nie plaeini; orders.
Silicon PNP Power Transistor BD910
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-i VcE(sat)-2 VeE(sat) VsEfon) IcBO ICEO IEBO hfE-1 llFE-2 hFE-3 fl PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -50mA; IB= 0 lc= -5A; IB= -0.5A lc=-10A; IB=-2.5A lc=-10A; IB=-2.5A lc= -5A ; VCE= -4V VCB= -80V; IE= 0 VCE= -40V; IB= 0 VEB= -5V; lc= 0 lc= -0.5A; VCE= -4V lc= -5A; VCE= -4V lc=-10A;VCE=-4V lc= -0.5A; VCE= -4V; ftest= 1.0MHz MIN -80 3.0 MAX -1.0 -3.0 -2.5 -1.5 -0.5 -1.0 -1.0 250 150 UNIT V V V V V mA mA mA MHz