BD909 NJSEMI | Alldatasheet
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Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BD909
DESCRIPTION
- DC Current Gain - : hFE = 40(Min.)@lc=0.5A
- Collector-Emitter Sustaining Voltage- - : VCECKSUSP 80V(Min)
- Complement to Type BD910
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 150 -65-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case UNIT V V V A A A W MAX 1.38 UNIT
- c/w <, /"N 1 "•' **. PIN 1. BASE 2. COLLECTOR 3. EMITTER TO-220C package > T Q A f i. - 8 » J-ery w.oo-
4 H ] ,
K f 11 . , -H < c tr *4*- u ^ i"Q* U i DIM A B C D F G H J K L U R S U V 50j., mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 F N.I Semi-t'ondnetors reserves the right to change test conditions, parameter limits ami package dimensions uithout notice. Information furnished by Nl Semi-Conductors is believed to he both accurate and reliable a( Hie lime of t'oini. u> press. ||m\\oer. M Semi-Conductors assumes no responMbilih lor an> errors or OIIHS.MOMI discovered in its use. V I Si.-ini-( I'lidiietms cii(:ciira':e-> i-ii'-ioiners In \\eril\\i dalasheel-. are ijnifiil bi-l'ure placinu orders. i-Condi irh"»r«
Silicon NPN Power Transistor BD909
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-1 VcE(sat)-2 VsE(sat) VeE(on) ICBO ICEO IEBO hpE-1 hFE-2 hpE-3 fl PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 50mA;la=0 lc= 5A; IB= 0.5A IC=10A;IB=2.5A IC=10A;IB=2.5A lc=5A;VCE=4V VCB= 80V; IE= 0 VCE= 40V; IB= 0 VEB= 5V; lc= 0 lc= 0.5A ; VCE= 4V lc=5A;VCE=4V lc=10A;VCE=4V lc= 0.5A ; VCE= 4V; flest= 1 .0MHz MIN 3.0 MAX 1.0 3.0 2.5 1.5 0.5 1.0 1.0 250 150 UNIT V V V V V mA mA mA MHz