BD908 NJSEMI | Alldatasheet
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Technical content
J^E.mi-Conducto'i I/ loaucti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD908
DESCRIPTION
- DC Current Gain - : hFE = 40@lc=-0.5A
- Collector-Emitter Sustaining Voltage- : VCEO(susr -60V(Min)
- Complement to Type BD907
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25T ) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -60 -60 -15 -20 150 -65-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case UNIT V V V A A A W MAX 1.38 UNIT 'CM/ '. 1 ' ; i ( [ i 1 2 3 PIN 1.BASE 2. COLLECTOR 3 arflTTER TO-220C package Ho U ip I T A i i .. B » -*..v--»| J-ert MtOC" t- H ~* K T JJ -»| ( C
- » ' •• JT HIM A B C D F G H j K L Q R S U V X"" L c i mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0 44 13.20 1.10 2 70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 046 13.40 1.30 2.90 2.70 1.31 6.65 8.86 --S — tsoo Nl Soiiii-C'iiikluctors reserves the right to change test conditions, parameter limits ami package: Jimensions u Knout iiuiici.1. Infbnnation t'uniislieil hy Nl Sciiii-Coniluctors is helicxal 10 he huh ncciirate ami ix-liahlc m ilic lime ol'j'.oin XI Si-mi-( nmhieliirs L-iicuiii;i'iCN cii'-inimTs to \\Aril's that Jaia^ieeK are ciiiu-nl helinv iilaeini; orilei's.
Silicon PNP Power Transistor BD908
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-i VcE(sat)-2 VsE(sat) VBE(on) ICBO ICEO IEBO nFE-i hFE-2 hpE-3 fi PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -50mA; IB= 0 lc= -5A; IB= -0.5A lc=-10A;lB=-2.5A lc=-10A; IB=-2.5A lc= -5A ; VCE= -4V VCB= -60V; IE= 0 VCE= -30V; IB= 0 VEB= -5V; I0= 0 lc= -0.5A; VCE= -4V lc= -5A; VCE= -4V lc=-10A; VCE=-4V lc= -0.5A; VCE= -4V; ftest= 1.0MHz MIN -60 '3.0 MAX -1.0 -3.0 -2.5 -1.5 -0.5 -1.0 -1.0 250 150 UNIT V V V V V mA mA rnA MHz