BD906 NJSEMI | Alldatasheet
Document overview
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Technical content
r ?!EIIEU ^E.mi-Conducko'i L/^roducti, One. £s \\J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD906
DESCRIPTION
- DC Current Gain - : hFE = 40(Min.)@lc=-0.5A
- Collector-Emitter Sustaining Voltage- . : VCECXSUSP -45V(Min)
- Complement to Type BD905
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE -45 -45 -15 -20 150 -65-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case UNIT V V V A A A W MAX 1.38 UNIT 'CM/ **»%* 2 1 ! • PIN 1.BASE . 2. COLLECTOR ' ] j 3. EMITTER I 2 3 TO-220C package ; y^_ A f L * B H -»-v-*( .••-' ±Gfl -HJH K f f C i it j y
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S I niiw A B C D F G H J K L Q R S U V -*. mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 N.I Semi-l.'tiiuliiLtors reserves the right U> change tcsl conditions, pnrainetcr limits and package dimensions uithmit In pre->s. I |ui\\e\\er. \\ Seini-Coiulnclors asMimes no rcsponsihilil\\r an> eirurs or oimssioiis vliseovered in its u-.e. X I Semi •( I'li'lik-lni-, ciiei'inaws Ld'-lomers In wrif> ilia! vlala-.lieeh :nv anivn! hel'mv plaeinj; mxlers.
Silicon PNP Power Transistor BD906
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) Vc£(sat)-1 VcE(sat)-2 VgEisat) VsE(on) ICBO ICEO IEBO hpE-1 hFE-2 hpE-3 fi PARAMETER Collector-Emitter Sustaining Voltage- Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -50mA; IB= 0 lc= -5A; IB= -0.5A |C=-10A;IB=-2.5A lc=-10A; IB=-2.5A lc= -5A ; VCE= -4V VCB= -45V; IE= 0 VCE= -30V; |B= 0 VEB= -5V; lc= 0 lc=-0.5A;VCE=-4V lc= -5A; VCE= -4V IC=-10A;VCE=-4V lc= -0.5A; VCE= -4V; ftest= 1 -0MHz MIN -45 3.0 MAX -1.0 -3.0 -2.5 -1.5 -0.5 -1.0 -1.0 250 150 UNIT V V V V V mA mA mA MHz