BD905 NJSEMI | Alldatasheet
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Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BD905
DESCRIPTION
- DC Current Gain - : hFE = 40(Min.)@lc=0.5A
- Collector-Emitter Sustaining Voltage1 : VCEo(sus)= 45V(Min)
- Complement to Type BD906
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C ) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 150 -65-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case UNIT V V V A A A W MAX 1.38 UNIT r/w „ ^ i ; t [_ 1 2 '-^ PIN 1.BASE 2. COLLECTOR S.miTTER TO-220C package M it*-, Ho1 its A f i 3 * H K T „„! t B H ~v-l, kDT0 pi wxooy ,,-F 1 rr Hch 1 n C 1 J A RIM A B C D F G H J K L Q R S u V soi-' WIN 15.70 9.9G 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 *-s 1500 r \\ II ^506 » p* - J Rr*- ,\\.l Soini-Cniidiictors a-servcs the right to change test coiulitions. p:ir;imctcr limits and piicknge dimensions \\\\ithout iiniii.v. liirbrniiitinn fiirnishal hy N.I Scini-Coinluctors is helieval to he hoih accunite mid reli:ihle nl I lie time ol >',oiii in pixss. lln\\\\c\\er. N.I Seiiii-CimdiitliirMissimies no rusponsihilil) lor;iii> CMXH'S or omissions disonered in its n>e. N I Si.-nii •( iMidiiciDi^ i.-ncniMMiiL'v aiMimiiT". to wril\\i J,ila^lii.\\'K ;nv ^uin-nt o |il:icini:
Silicon NPN Power Transistor BD905
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-i VcE<sat)-2 VBE(sat) VBE(OII) ICBO I CEO IEBO hpE-1 hFE-2 hpE-3 fy PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 50mA ;IB= 0 lc= 5A; IB= 0.5A IC=10A;IB=2.5A IC=10A;IB=2.5A lc= 5A; VCE= 4V VCB= 45V; IE= 0 VCE= 30V; I B= 0 VEB= 5V; lc= 0 lc= 0.5A; VCE= 4V lc= 5A; VCE= 4V lc=10A;VCE=4V lc= 0.5A; VOE= 4V; ftest= 1.0MHz MIN 3.0 MAX 1.0 3.0 2.5 1.5 0.5 1.0 1.0 250 150 UNIT V V V V V mA mA mA MHz