BD902 NJSEMI | Alldatasheet
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Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor BD902
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo=-100V(Min) "
- High DC Current Gain : hFE= 750(Min) @lc= -3A
- Collector Power Dissipation- : Pc= 70W@ Tc= 25°C
- 8 A Continuous Collector Current
- Complement to Type BD901
APPLICATIONS
- Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -100 -100 -0.3 150 -65-1 50 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 1.79 62.5 UNIT 6C/W °c/w , ^ i : I ! ; !. 1 2 3 j_— PI rt i-l ^ Y "• M7 N 1.BASE 2. COLLECTOR 3.BVHTTER TO-220C package ui iyr A T ^ -.-V »j ^cry t'-^ moos . * H ' -, t c i I IT G [»- j DIN A B C D F G H J K L Q R S U V s~? soi-- • L D mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86
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Silicon PNP Darlington Power Transistor BD902
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VBE(OP) ICBO ICEO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage . Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS lc= -100mA; IB= 0 |c=-3A;lB=-12mA lc= -3A ; VCE= -3V VCB=-100V; IE=0 VCB=-100V;lE=0;Tc=100IC VCE= -50V; IB= 0 VEB= -5V; lc= 0 lc=-3A;VcE=-3V MIN -100 -750 TYP. MAX -2.5 -2.5 -0.2 -2.0 -0.5 UNIT V V V mA mA mA Switching Times *on toff Turn-On Time Turn-Off Time lc=-3A; lBi=-lB2=-12mA; VHCI «\\- 3 5Vp Ri - 1 0 Q • tp= 20 u s,DutyCyde=e 2% u s u s