BD901 NJSEMI | Alldatasheet
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Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlington Power Transistor BD901
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= 100V(Min)
- High DC Current Gain : hFE= 750(Min) @|c= 3A
- Collector Power Dissipation- : Pc= 70W@ Tc= 25 "C
- 8 A Continuous Collector Current
- Complement to Type BD902
APPLICATIONS
- Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VOBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ TC=25'C Junction Temperature ' Storage Temperature Range VALUE 100 100 0.3 150 -65-150 UNIT V V V A A W r THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 1.79 62.5 UNIT °c/w 'CM/ 1 2 i PIN "1 " R1 wr j
1 BASE
- COLLECTOR 3.BWIITTER TO-220C package M yQJ. A T * ^ * .H_ K — » J C " t B f kyt HMBV
- {<
- • » 'fi*8 DIM A B C D F C H J K L Q R S u V soi-- L v D mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 rs —IS 00 R|-» Oiinlih/
Silicon NPN Darlington Power Transistor BD901
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VBE(OII) ICBO ICEO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS lc= 100mA;lB=0 lc=3A; lB=12mA lc= 3A ; VCE= 3V VCB=100V;IE=0 VcB=100V;lE=0;Tc= 100"C VCE= 50V; IB= 0 VEB= 5V; lc= 0 lc=3A; VcE=3V MIN 100 750 TYP. MAX 2.5 2.5 0.2 2.0 0.5 UNIT V V V mA mA mA Switching Times ton toff Turn-On Time Turn-Off Time lc= 3A; IB1=-IB2= 12mA; Viacom- -3 5V Ri - 1 0 Q • tp= 20 n s,DutyCyde=S 2% u s US