BD875 SIEMENS | Alldatasheet
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es - =a = _ 2SC D MM 8235605 0004421 3 MMSIEG--+ 1-33-29 ! NPN Silicon Planar Darlington Transistors ~ BD 875 i BD877.—, SIEMENS AKTIENGESELLSCHAF @! 9° BD879 | BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package (12 A 3 DIN 41869, sheet 4). These darlington transistors . are designed for relay drivers as well as for general AF applications. BD 876, BD 878, and : BD 880 are provided as complementary transistors. | remo. ap i Type Ordering code 08-05 inn : BD 875 62702-0902 ———H| by 3 3 BD 879 62702-D904 my } Spring washer 1624 107202 : A3 DIN 137 062902-B63 3 1 Mica washer 062902-862 FE i j [pana aes | 5 1 Approx. weight 0.6 g Dimensionsinmm | 1 ! Transistor fixing with M 3 screw,starting torque j i | ‘mex. 0.8 Nm; washer or spring washer should } ! be used. 3 ! +—oE , [ ne 1 - i Maximum ratings (Toms = 25°C) Bp 875 | BD 877 | BD 879 ‘ Collector-emitter voltage Voeo * | 45 60 80 Vv i Collector-base voltage Veso 60 80 100 Vv i Emitter-base voltage Veco | 5 5 5 v Collector current Ic 1 1 1 A F Collector peak current Iw | 2 2 2 A Junction temperature Tj 150 180 | 180 | °c i Storage temperature range Tstg ~65 to +150 es : Total power dissipation : (Tem S 25°C) Prot 1.28 | 1.25 | 125 |W + (Tease S 60°C) a) 9 9 w i Thermal resistance . Junction to ambient air Rina | <100 | <100 | <100 | KW Junction to case Rinse | <10 <10 <10 KW i {1844 = F-05 467 .
25¢ D MM 8235605 O0O4422 § MESIEG T-33-29 : . 25C 04422 D BD 875 it BD 877 vt STEMENS AKTIENGESELLSCHAF ———— BD 879 fo t Static characteristics (Tamp = 25°C) Bo8765 | 80877 | BD879 . Collector cutoff current j (Vea = Voamex) Teao <100 <100 <100 nA ! Collector cutoff current 3 (Vee = 0.8 Voemax) Iceo <500 <500 <600 nA i Emitter cutoff current H (Veg = 4 V) Teso <100 <100 <100 nA if Collector-emitter breakdown ii voltage (Ic = 50 mA) Viericeo | >45 >60 >80 v | Collector-base breakdown ig voltage (Ic = 100 nA) Vierycso | >60 >80 >100 «|v | Emitter-base breakdown ’ voltage (Je = 100 pA) Vierseso | >5 >5 >5 Vv “Y DC current gain | (Ic = 150 mA; Veg = 10 V) hee >1000 |>1000 |>1000 |- 7 Uc = 0.8 A; Vee = 10 V) hee >2000 |>2000 |>2000 | - i Collector-emitter saturation , voltage Ug = 1A: Ig = 1 mA) Veesat <18 <18 <18 Vv “yh Base-emitter saturation . : voltage Ug = 1 As Ig = 1 mA) Vaesst | <2.2 <2.2 <2.2 v Dynamic characteristics (Tymp = 25°C) Transition frequency (Ig = 0.5 A; Vee = 5 V: f= 35 MH2) fy | 200 | 200 | 200 | MHz : 468 .
1845 F-06
_@5C D M™ 8235605 0004423 7 MMSIEG. 1-33-31 . { PNP Silicon Planar Darlington Transistors . BD 876 j . BD 878 i SIEMENS AKTIENGESELLSCHAF ‘2? 2: Bpsso | BD 876, BD 878, and BD 880 are epitaxial PNP silicon planar darlington transistors j in TO 126 plastic package (12 A 3 DIN 41 869, sheet 4). These darlington transistors j are designed for relay drivers as well as for general AF applications. BD 875, BD 877, i and BD 879 are provided as complementary transistors. H 25min ©, - Type Ordering code 0805 a + BD 876 062702-D908 ——4 rs 3 i BD 878 62702-0907 3-=——_ F . BD 880 Q62702-D906 a Spring washer 1624 — elena : A3 DIN 137 Q62902-863 s : Mica washer Q62902-B62 s . posrccrasa ’ : : { c Approx. weight 0.8 g. Dimensions in mm i
8 Transistor fixing with M 3 screw,starting torque 1
1 if max. 0.8 Nm; washer or spring washer should } i | be used. . } Lo i Maximum ratings (Tamb = 25°C) BD 876 | BD 878 | BD 880 . Collector-emitter voltage Veco | 45 60 80 v Collector-base voltage -Vego | 60 80 100 Vv - Emitter-base voltage —Vepo | 5 5 5 Vv : Collector current alg 1 1 1 A . Collector peak current low 2 2 2 A Base current -lp 0.1 0.1 0.1 A * Junction temperature Wi 150 150 150 °C 2 Storage temperature range Tstg -65 to +150 °c Total power dissipation : (Tamb 3 25°C) Prot 1.25 1.26 1.25 w (Tease $ 60°C) Po «19 9 9 w ° Thermal resistance : Junction to ambient air Rina | <100 | <100 | <100 | Kw . Junction to case Rihuc <10 <10 <10 Kw -- ™ 469
1846 F-07
_ 25¢ D WM 8235605 ooo44e4y 49 MESIEG : 25C 04424 D BD 876 SESELLS. 1-33-31 BD 878 SIEMENS AKTIENGESELLSCHAF | BD 880 Static characteristics (Tams = 25°C) Bp 876 | BD 878 | BD 880 Collector cutoff current (Vea = Voamex) =Ieeo | <100 | <100 | <100 | na Collector cutoff current (Vee = 0.5 Veemax Ico <6500 | <500 | <500 | nA Emitter cutoff current Collector-emitter breakdown voltage (Ic = 50 mA) -Vienceo |>45 | >60 |>80 |v Collector-base breakdown : voltage (~Zc = 100 uA) -Verceo |>60 |>80 |>100 |v : Emitter-base breakdown voltage (le = 100 uA) =Vieryes0 | >5 >6 >6 v DC current gain (Ig = 180 mA; -Vog = 10 V) ee >1000 | >1000 | >1000 | - , Collecor-emitter saturation : voltage (-Ig = 0.5 A; ~Ig = 0.5 mA) Vee | <13 |<13 |<i3a [v i (-ic= 1A; “Ig = 1 mA) “Vee [<1 |<18 |<1e |v : Base-emitter saturation 4 voltage Dynamic characteristics (Tam = 25°C) Transition frequency (-Ig=0.5 A; Veg = 5 V:f=35MHz) fy |200 | 200 | 200 | mz 470 See . 184? F-08 . -
25C D MM 8235605 OOO442S O MMSIEG. | 1-33-29 : NPN Silicon Darlington Transistors BD 975 . - BD977_ SIEMENS AKTIENGESELLSCHAF "#25 0 BD 979s BD 975, BD 977, and BD 979 are epitaxial NPN silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay drivers : as well as for general AF applications. i BD 976, BD 978, and BD 980 are provided as complementary transistors. : bf] iz Type Ordering code a of oe = @ i @{s 3 BD 975 | 062702-D962 Tate r+ 3 BD 977 | 062702-D964 2s iS Fi BD 979 | 062702-D966 wae Fide : 85203 13,8 | 43,281 27202 popot tt Approx. weight 16g. Dimensions in mm . 1 ‘ eet i 5, : | i i ; | E Lod 132801 >] ast ay : Available upon request also with bent : fixing plate. Maximum ratings BD 975 | BD 977 | BD 979 - Collector-emitter voltage Veco 45 60 80 Vv . Collector-base voltage Vero | 60 80 100 v Emitter-base voltage Vepo 5 5 5 v Collector current Ig 1 1 1 A . Collector peak current Tow 2 2 2 A ‘ Base current Ip 0. 0.1 0.1 A Storage temperature range Tag -65 to +150 °c Junction temperature Hi 150 160 150 *c Total power dissipation (Tam = 25°C) Prot 16 16 1.6 w (Tease = 60°C) Prot 36 3.6 3.6 w Thermal resistance Junction to ambient air Rinsa | 78 | 78 | 78 | KW ‘ Junction to case Ric | 25 25 25 Kw i “471 (4848 F-09 7
25C D MM 6235605 OOO442b 2 MMSIEG . - 25C 04426 DB ggg T-33-29 BD 977 SIEMENS AKTIENGESELLSCHAF - ———————— BD 979 Static characteristics (Temp = 25°C) D975 |BD977 | BD979 Collector cutoff current ‘ (Voao = Voamax) Teso <100 <100 <100 nA 4 Collector cutoff current 5 (Veco = 0.5 Veemex) Ieeo <600 <500 <500 nA i Emitter cutoff current . (Vego = 4 V) Tes0 <100 <100 <100 nA . Collector-emitter breakdown voltage (Jc = 50 mA) Versceo | >45 >60 >80 Vv Collector-base breakdown i voltage (/¢ = 100 pA) Veericao | >60 >80 >100 v - Emitter-base breakdown : voltage (Iz = 100 nA) Veryeso | >5 >5 >6 v DC current gain (Ig = 180 mA; Veg = 10 V) hee >1000 |>1000 |>1000 | - lg = 0.8 A; Vee = 10 V) hee >2000 |>2000 |>2000 | - Collector-emitter saturation voltage Ug = 1A; Ig = 1 mA) Veesat <18 <18 <18 v i Base-emitter saturation % voltage (c= 1A; Ig = 1 mA) Vagsar | <2.2 <2.2 <2.2 v . Dynamic characteristics (Tam) = 25°C) Transition frequency . (Ic = 0.8 A; Vee = 5 V; f= 35 MHz) fr |200 =| 200 =| 200 | Mz 4720 7 1849 F-10 .
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SIEMENS AKTIENGESELLSCHAF — Bp979 : Collector-omitter saturation voltage Base-emitter saturation voltage . mA Voesat = fc) mA Votsat =f Uc) j 90 eer gt 10 ge : Se or EERE REESE EH : te ERE AGERE te EEE EEE i oe | COCO CeCeeec | | Fae { FEEEEEE LT Neath Boalcan |_| Leeson TTT T | BERD izeon Tia el we 1 wl {| "ee = 1000 : ESS 4 EERE ES CHHEEEEEE| ‘ ooo oo ECE EE HEE EEE i a | | * a COCCECOnE eee : ae eee LETT TO . LEE TT LE ; el LUMA LETT eUTITTT 0 1 2v 0 1 2 3V i —— Vee sat — Vor sat ° mA Goltecor currant f= ee) De current gain fre =f Ue) . 0 SSS 0 ero . ke FE He " itt cs det : CT Ce] i mma 1 a -
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C) 1 2 10! 107 10° 10mA —> Ve ek 474 etna .