BD861 SIEMENS | Alldatasheet
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25¢ D mm 8235b05 0004413 4 mmSIEG, 1-33-29 ‘ NPN Silicon Darlington Transistors BD 861 : : 25C 04413 9 ——BD 863 : SIEMENS AKTIENGESELLSCHAF BD 865 i Epibase power darlington transistors (15 W) : BD 861, BD 863, and BD 865 are monolithicsilicon NPN epibase power darlington transistors with diode and resistors in a plastic package similar to TO 202. The collectors of the two transistors are electrically connected to the metallic mounting area. These darlington transistors for AF applications are outstanding for a particularly high current gain. Together with BD 862, BD 864, and BD 866, they are especially useful as complementary : AF push-pull output stages for color TV correction stages. i Type Ordering code a ne BD 861 | 062702-D966 3 oe | ele BD 863 | 062702-D958 Tara ad r4 Bp 865 | 062702-D960 as ant 3 Es a e510 39 13.21 17202 ‘ Approx. weight 15 g. Dimensions in mm Available upon request also with bent fang plats. Maximum ratings BD 861 | BD 863 | BD 865 . Collector-emitter voltage Veco | 45 60 80 v Collector-base voltage Veso | 45 60 80 v Base-emitter voltage Vepo 5 5 5 Vv Collector current Ie 4 4 4 A . Collector peak current (t S 1 ms) Tow 7 7 7 A Base current Ip on 0.4 0.1 A Storage temperature range Tote 85 to +160 °C Junction temperature T 160 | 150 | 180 fc Total power dissipation (Tease S 25°C) Prot 15 16 15 w Thermal resistance Junction to ambient air Ring | 62.5 | 62.6 | 62.5 | Kw Junetion to case Rinse | 8.3 83 83 kw
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on — . eee ae ee ee - @5C D MM 8235605 OO04414 b&b MMSIEG T-33-29 : _.25C 04414 D BD 861 BD 863 Static characteristics (Tamp = 25°C) BD 861 | BD 863 | BD 865 Collector cutoff current (Vea = Veamax) Teao <0.2 | <02 |<02 | mA (Vac = Veamax: Tamb = 100°C) Teao <2 <2 <2 mA Collector cutoff current (Vor = 0.5 Voemax) Teco <0s |<06 |<05 | mA . Emitter cutoff current (Vego = 5 V) Teso <5 <5 <5 mA Collector-emitter breakdown H voltage (Ic = 100 mA) Vericeo | >45 >60 >60 Vv . Collector-base breakdown voltage (Ic = 1 mA) Vierjcao | >45 >60 >so |v Emitter-base breakdown voltage (Ig = 5 mA) Veerjeao | >8 >5 >5 v . DC currant gain Ug = 50 mA; Voce = 3 V) hee 750 760 750 - (3000) | (3000) (Ic = 4A; Vee =3V) Dre 1000 | 1000 | 1000 | - Base-emitter forward voltage : Uc = 1.5 A; Voge = 3V) Vag <25 |<28 |<25 |v : Collector-emitter saturation voltage . Forward voltage of the protective : diode at fr; =3A Ve 18 18 18 Vv . Dynamic characteristics (Tamp = 25°C) Transition frequency (Ig = 1.5 A; Vog = 3 V; f = 1 MHz) f 71) | 71) | 701) | Miz > Cutoff frequency in common emitter . emitter configuration (Ig = 1.5 A; Veg = 3 V) fate 60 60 60 kHz i 49 1837 E=12
25C D M™ 8235605 OOO4415 8 MBSIEG © 1-33-29 } “ow _25C 04415 D' * Bp ger i ~ BD863. SIEMENS AKTIENGESELLSCHAF —-—————— BD 865 Total perm. power dissipation ‘Total perm. power dissipation: : versus temperature versus temperature i Prot = # (7); Vee = parameter Prot = (1): Vee = parameter ‘ w BD 861, BD 863 w BD 865 | 20 20 Coo Too! CPTTTrT rrr tr LETT rrr yy rer rt a oc Se COCO ~ TTT try rrr PPP rere yy rrr i s SQ { COP CTINT Tyr 5 Pe -EE LEE H CCN) CONCCC Cee erry : CPT N ATT rr Losey SHEE 4 COCO Ne CCC ERAS ECCeE ery i CCL eer Liaw NPC t Coes CA CCCCee 1» EEL EE ENR LCCC } COOP Eee Choy TEEN Perr 3 Lov NE Croov tN TT : Reeve Ee sCLLC NT FRASEEEEERATIT i COPCeeeccee erry 5 SEEN CChsv-C CECT COOPPP reer : BSPYERESESSESNG EEEEEEEECEEAN » CLEC COCCCCCCeeeeere Ny i 0 0 100 150°C 0 0 m0 150°C i —+r —T A Permissible operating range Permissible operating range 7 Te = Wee): Toate 25°C; D = 0.01 Te=t Woe); Teasa$25°C; D = 0.01 A BD 861, BD 863 A BD 865 2 » SOAS ‘ NSIS EEC CoO Sa 3° Crt eiedicse hey 2 Cran reer 2 Leen cre 4 ve LITT CE TT we LIT TM? 1" 10° 10! wv io 10° 10! 107V — Ne — Mec i se kee 461
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“BSC Dm a235b05 OODNNIL TMMSIEG 1-33-29 BD se3 SIEMENS AKTIENGESELLSCHAF TT BD 865 . Permissible pulse load Fes =r) i Zn FREER | CATCH at A a Fiesta : ee ae AU p.7 ‘ail foro 7 Ty UH sot Tv Lt : 10° 40°F 104 103 10? 107 09 08s t we 462 “ .