BD810 NJSEMI | Alldatasheet
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Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD810
DESCRIPTION
- DC Current Gain - : hFE =30@ lc= -2A
- Collector-Emitter Sustaining Voltage- : VCEO(sus)= -80V(Min)
- Complement to Type BD809
APPLICATIONS
- Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -80 -80 -10 150 -55-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case UNIT V V V A A W MAX 1.39 UNIT r/w 111, PIN 1. BASE 2. COLLECTOR 3.B/IITTER TO-220C package Mi A T * - B ~ ^yi WLOO'^' * H ya "~H c r c ,-•• 1 t yr I DIM A B C D F G H J K L Q R S U V mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — IS 00 t *• r*" J M.I Saiti-CimJuctors reserves the right to change test conditions, p:irumetcr limits and package dimensions uithout nniicc. Inrbrniation tiirni.slicd hy N.I Scmi-Conductors is believed lo he hoih accurate and reliable ;il the time ol'i-'.oin;, lii PIV-A. llin\\e\\er. M Seini-Conduclors assumes no respon-.ihilil> lor ;\\u> orrurs or omissions discovered in its use. N I SI-IMI-( rinlneli'iv eiiei'iira^e^ (.ir-luMKTs In vi'ril'v thai J,iln--lieeN are- eunx-iil hol'mv pl.iciim orders
Silicon PNP Power Transistor BD810
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeEton) ICBO IEBO hpE-1 hpE-2 fi PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=-100mA;lB=0 lc= -3A; IB= -0.3A lc= -4A ; VCE= -2V VCB= -80V;IE= 0 VEB= -5V; lc= 0 lc=-2A;VCE=-2V lc= -4A ; VCE= -2V lc= -1 .OA ; VCE= -1 0V; f,est= 1 .0MHz MIN -80 1.5 MAX -1.1 -1.6 -1.0 -2.0 UNIT V V V mA mA MHz