BD809 NJSEMI | Alldatasheet
Document overview
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Technical content
<^E.ml-Condu.<itoT iPT , {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BD809
DESCRIPTION
- DC Current Gain - : hFE=30@lc=2A
- Collector-Emitter Sustaining Voltage- : VcEO(sus)= SOV(Min)
- Complement to Type BD81 0
APPLICATIONS
- Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 150 -55-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case UNIT V V V A A W MAX 1.39 UNIT 'CM/ i 1 2 PIN 1.BASE 2. COLLECTOR 3.B/IITTER TO-220C package H *joq JL i. j f H i K t T B - kin ;-> /-» -»• E ' H * h- ^ HIM A B C D F G H J K L Q S u V mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — -poo «-B-* 5 00 ^ ^ J Rr* N.I Seini-t oikluttois reserves the right to change test conditions, parameter limits and package dimensions uithout imiKY. Inrbmtation fiirni.shal hy N.I Sciiii-Coiuluetors is helie\\ecl to he hoth accurate and reliable n the time nt'i-oin to piv-is. llo«e\\er. N.I Semi-Conductors assumes no responsibility I'or an\\s or omission^ discovered in its use. \\ Si-m i -I i MI due I uis eiiciiiniMii"- i.'u-.tinners In \\cril\\t diita^heeU :ire 1.111 mil K'l'niv placim; ui'vlers.
Silicon NPN Power Transistor BD809
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(on) ICBO IEBO hpE-1 hFE-2 fl PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 100mA ;IB=0 lc= 3A; IB= 0.3A lc= 4A ; VCE= 2V VCB= 80V; I E= 0 VEB= 5V; lc= 0 lc=2A;VCE=2V lc= 4A ; VCE= 2V lc= 1.0A; VCE= 10V; fteBt= 1.0MHz MIN 1.5 MAX 1.1 1.6 1.0 2.0 UNIT V V V mA mA MHz